SMQ Series 510 DIODE
Contextual Info: Hermetic Surface Mount PIN Diodes V 2.00 Features • Power Dissipation to 1 Watt • Low Loss Switching Diodes • Low Distortion Attentuator Diodes Description This series of PIN diodes is encapsulated in metal elec trode faced MELF bond packages resulting in hermeti
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ma4ph236ma4ph238ma4ph235ma4ph237+7ma4ph239ot-23ma4p274ma4p278ma4p277ma4p275smq series 510 diode
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Contextual Info: L-Band Uplink Power Module PHA1618-45 45 Watts, 1608-1628 MHz, 85 ms Pulse, 5% Duty Features • • • • • Outline Drawing Operation 1608-1628 MHz NPN Silicon Power Transistors TTL Compatible Burst Control Duroid Circuit Board 50 Ohms Input and Output Matched
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pha1618-45sb4220sgg01377 |
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SW SPDT
Abstract: QQD243L SW-106 SW-276 sw276pin
Contextual Info: m an A M P com pany High Power GaAs SPDT Switch DC- 3 GHz SW-106, SW-276 V 2.00 SW-106 CR-5 Features Orientation Mark • +39 dBm Typ. 1 dB Compression Point, -8V Control • +65 dBm Typ. 3rd O rder Intercept, -8V Control • Insertion Loss of 0.4 dB Typical
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sw-106sw-276qqd243lsw spdt+1sw276pin
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transistor c 3206
Abstract: transistor j7
Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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ph0404-7elsb4220s5b422050dq1175+2transistor c 3206transistor j7
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AT-101
Abstract: AT-101-PIN AT-101PIN
Contextual Info: M < tw ¥ \ M a n A M P com pany Voltage Variable Attenuator 10 -1000 MHz FP-2 Features • 2 dB Typical Midband Minimum Attenuation • 60 dB Typical Midband Attenuation Range • 1.5:1 Typical Midband VSWR Over Entire Attenuation Range Guaranteed Specifications*
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at-101sb4220sat-101-pinat-101pin |
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PH1417-200S
Abstract: F 140 F140 C5 155 10 PH1417
Contextual Info: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor
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ph1417-200ssb4220sddd12lf 140+3f140c5 155 10ph1417
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T039 package
Abstract: UF2801KI rf power mosfet
Contextual Info: M/ A- COri P H 0 4ÔE D • 5b422G5 GG0G7G1 13T ■ NAP 7" - 5 ^ UF2801KI N -C h an n e l RF Power MOSFET Features • DMOS Structure • Lower Capacitances for Broadband Operation • Lower Noise Floor • 100 MHz to 500 MHz Operation •• Common Source T 0 3 9 Package Configuration ••
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uf2801kit039 packagerf power mosfet |
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