5B422G5 Search Results

T039 package

Abstract: UF2801KI rf power mosfet
Contextual Info: M/ A- COri P H 0 4ÔE D • 5b422G5 GG0G7G1 13T ■ NAP 7" - 5 ^ UF2801KI N -C h an n e l RF Power MOSFET Features • DMOS Structure • Lower Capacitances for Broadband Operation • Lower Noise Floor • 100 MHz to 500 MHz Operation •• Common Source T 0 3 9 Package Configuration ••

Contextual Info: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

transistor 45 f 122

Abstract: capacitor 4.7 uF electrolytic capacitor 47 transistor 975
Contextual Info: Avionics Pulsed Power Transistor A ß PH0912-75 Preliminary 75 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration