TRANSISTOR AH 2 Search Results

Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Contextual Info: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_

LM114

Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
Contextual Info: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis­ tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching

transistor Cd 18 p

Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V

Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function

Contextual Info: MMBTA63/64 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C DIM CHARACTERISTIC A B SYMBOL Collector-Base MMBTA63/64 Voltage C ollector-E m itter MMBTA63/64 Voltage Em itter-B ase Voltage

2N4400

Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401
Contextual Info: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package

2n3904

Abstract: 2N3903 transistor 2N3904 plastic general purpose transistors npn
Contextual Info: Small Signal General Purpose Transistors NPN 2N3903/2N3904 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package

TRANSISTOR AH-16

Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Contextual Info: Transistors Digital Transistor Common Emitter Dual Transistors U M G 2 N / F M 2 A G •F e a tu re s 1) Two DTC144E digital transistors in a UMT, SMT package. 2) M ounting co st and area can be cut in half. •S tru c tu re Epitaxial planar type NPN silicon transistor

power 22E

Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage

Multimeter dmm 850

Abstract: transistor number D 2498
Contextual Info: Low Cost Handheld DMM’s ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ GS-Mark EN61010-1 Approval, Over-Voltage Category II 600 Vdc/Vac; Pollution Degree II Models: HHM26 and HHM28 have RS-232 Interface Safety Input Jacks Logic Probe Tester Models: HHM15, HHM20, HHM23 Temperature Measurement

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPSA10

Contextual Info: S AM S UNG SEMICONDUCTOR INC IME MPSA20 D J 7*^14142 0007351 I I T ‘ ^ ¿ / NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o “ 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C)

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7*11.4:1.42 O O O T a T l b | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 1 DARLINGTON AMPLIFIER TRANSISTOR :- SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic

MJE350 equivalent

Contextual Info: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7 elt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Coltector-Emltter Voltags: Vc£o =25V • Collector Dissipation: I Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS