TRANSISTOR AG QS Search Results

Contextual Info: KSC2755 NPN EPITAXIAL SILICON TRANSISTOR RF AMP, FOR VHF TV TUNER S O T-23 . LOW NF, HIGH Gpe . FO RW ARD AG C C A PABILIT Y T o 30 dB • N F=2.0dB Typ. G pe=23dB Typ. f=200M Hz ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage

TRANSISTOR si 6822

Abstract: QSOP-44 elmos 100 ELMOS Semiconductor
Contextual Info: 3 * Half Bridge Controller for System Optimization E523.01B, 02B, 11B, 12B ADVANCE PRODUCT INFORMATION – Mar. 20, 2013 Features • • • • • • • • • • • • • • Applications Dead-time generation dynamical change via SPI IC supply voltage range 7 to 28V (peak 42V)

transistor 2xw

Abstract: 38GHz T485B S11 INFINEON
Contextual Info: T485B_LNA GaAs 38 GHz Low Noise Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 40 GHz • Noise figure < 4.5 dB • Gain > 14 dB • P-1dB > 12 dBm, Psat > 15 dBm

pseudomorphic HEMT

Abstract: 38GHz T485B
Contextual Info: T485B_MPA_1 GaAs 38 GHz Medium Power Amplifier MMIC • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 13 dB • P-1dB > 17 dBm • Psat > 19 dBm chip size: 1,1 mm x 1,9 mm

vco mmic

Abstract: pseudomorphic HEMT T485B T485A transistor 2xw
Contextual Info: T485B_VCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier InGaAs/AlGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

Infineon Design Link

Contextual Info: T458B_PA 17 – 24 GHz GaAs Power Amplifier/Driver MMIC • 4 Stage Monolithic Microwave Integrated Circuit MMIC Amplifier • Input/Output matched (incl. bond wires) • Frequency range: 17 GHz to 24 GHz • High Isolation > 50 dB • Gain > 22 dB • P-1dB > 23 dBm, Psat > 24 dBm

Contextual Info: W8 3 7 92 AD/D W83792AG /G Winbond H/W Monitoring IC CSB Version Date :2005 Nov. Revision: 0.9 W83792AD/AG/D/G PRELIMINARY W83792AD/D Data Sheet Revision History Pages Dates Version Web Version Main Contents 1 Aug-27-2003 N/A Move Low Bit I/II to AEh and AFh

60N03

Abstract: 60N035
Contextual Info: KF17117A-5 6 0 N 0 3 5 N -Channel Field Effect Transistor Preliminary June 2001 General Description These n-channel power field effect transistors are produced using high cell density D M O S technology. These devices are particularly suited for low voltage applications such as automotive and other battery

Contextual Info: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING TO -126 • Complement to KSD882 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage C haracteristic VcBO -4 0 V Collector- Emitter Voltage VcEO - 30 V Emitter- Base Voltage

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

6R280E6

Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 IPx60R280E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6

6R520E6

Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

Contextual Info: KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 600 V Collector Emitter Voltage VcEO

6r950c6

Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6

Contextual Info: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

65C7019

Abstract: IPZ65R019 PG-TO247-4 ipz65r019c7 smd mosfet 400v
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description PG-TO247-4

65C7225

Abstract: Ipp65r225
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R225C7 1Description TO-220 tab

65C7045

Abstract: DT80A
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK

Sj 07 DIODE SMD

Abstract: ipd65r IPD65R225C7 65C7225
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPD65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPD65R225C7 1Description DPAK

IPL65R130C7

Abstract: 65C7130
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R130C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R130C7 1Description ThinPAK8x8

Contextual Info: KSC3073 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATION l-PACK • Complement to KSA1243 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 30 Collector Emitter Voltage V ceo 30 V V Emitter Base Voltage V ebo

zener diode phc 24

Abstract: 350v ZENER DIODE -20/zener diode phc 24
Contextual Info: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for

TRANSISTOR SMD MARKING CODE ag

Abstract: smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
Contextual Info: SIEMENS SPNX2N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ffos on in SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 ,4 3 • 150°C operating temperature G D S Type