TO220ABS Search Results

Contextual Info: Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

Contextual Info: Preliminary Datasheet CR8CM-12A R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 600V - 8A - Thyristor Medium Power Use Features • IT AV : 8 A • VDRM : 600 V • IGT : 15 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0701DPN-E0 R07DS0622EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 75 V, 100 A, 3.8 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.0 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

RJK1001DPN-E0

Contextual Info: Preliminary Datasheet RJK1001DPN-E0 R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 100 V, 80 A, 5.5 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.4 m typ. (at VGS = 10 V) Package TO-220AB Outline

2sk1793

Abstract: TO220ABs K1793 ctm 2s 2SK1793-Z
Contextual Info: A ia S iiE c • MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 7 9 3 , 1 7 9 3 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PA C K AG E DIM ENSIONS T h e 2S K 1793 is N -channel M O S Field Effect Transistor de­ in m itiimeters signed fo r high v o ltag e sw itch in g applications.

Contextual Info: Preliminary Datasheet CR12CM-12B 600V - 12A - Thyristor R07DS0232EJ0200 Rev.2.00 Feb 25, 2013 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type

Contextual Info: Preliminary Datasheet BCR6CM-12LB 600V - 6A - Triac R07DS1027EJ0100 Rev.1.00 Feb 25, 2013 Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT RMS : 6 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline

BCR16CM16LH1J6

Abstract: BCR16CM-16LH-1J6
Contextual Info: Preliminary Datasheet BCR16CM-16LH 800V - 16A - Triac Medium Power Use R07DS0420EJ0200 Rev.2.00 Feb 25, 2013 Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 16 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)

BCR10CM-12LB

Contextual Info: Preliminary Datasheet BCR10CM-12LB R07DS1029EJ0400 Previous: REJ03G0455-0300 Rev.4.00 Feb 25, 2013 600V - 10A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 10 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6

Contextual Info: Preliminary Datasheet BCR16CM-12LB R07DS1032EJ0400 Previous: REJ03G0457-0300 Rev.4.00 Feb 25, 2013 600V - 16A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 16 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6

Contextual Info: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline

Contextual Info: Preliminary Datasheet CR6CM-12A 600V - 6A - Thyristor R07DS1033EJ0300 Rev.3.00 Jul 30, 2013 Medium Power Use Features • IT AV : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

RJK0703DPN-E0

Contextual Info: Preliminary Datasheet RJK0703DPN-E0 R07DS0624EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 75 V, 70 A, 6.7 m Features •    High speed switching Low drive current Low on-resistance RDS on = 5.3 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet BCR10CM-16LH 800V - 10A - Triac Medium Power Use R07DS0320EJ0200 Rev.2.00 Feb 25, 2013 Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 10 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)

BCR12CM

Contextual Info: Preliminary Datasheet BCR12CM-16LH R07DS0261EJ0200 Rev.2.00 Feb 25, 2013 800V - 12A - Triac Medium Power Use Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 12 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)

Contextual Info: Preliminary Datasheet CR6CM-12A R07DS1033EJ0200 Previous: REJ03G1706-0100 Rev.2.00 Feb 25, 2013 600V - 6A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA Outline

BCR6CM-12RA

Contextual Info: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline

Contextual Info: Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type

Contextual Info: Preliminary Datasheet BCR30CM-8LB R07DS1105EJ0100 Rev.1.00 Aug 08, 2013 400V-30A-Triac Medium Power Use Features • IT RMS : 30 A • VDRM : 400 V • IFGT I, IRGT I, IRGT III : 30 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type Outline

PRSS0004AG-A

Contextual Info: Preliminary Datasheet RJK0702DPN-E0 R07DS0623EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 75 V, 90 A, 4.8 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.9 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK1002DPN-E0 R07DS0620EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 100 V, 70 A, 7.6 m Features •    High speed switching Low drive current Low on-resistance RDS on = 6.0 m typ. (at VGS = 10 V) Package TO-220AB Outline

BCR12CM

Contextual Info: Preliminary Datasheet BCR12CM-12LB R07DS1030EJ0400 Previous: REJ03G0456-0300 Rev.4.00 Feb 25, 2013 600V - 12A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6