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    TRANSISTOR ADOP Search Results

    TRANSISTOR ADOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR ADOP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor A 564

    Abstract: S-AV8 2-13B1A 564 transistor S-AU4
    Contextual Info: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the


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    tcs90transistor a 564s-av82-13b1a+2564 transistors-au4 PDF

    2SC5603

    Abstract: marking TW
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


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    2sc5603s21e22sc5603-t1marking tw PDF

    2SC5604

    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


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    2sc5604s21e22sc5604-t3 PDF

    2SA1784

    Abstract: 2SA1781
    Contextual Info: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


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    en35202sa1784/2sc4644vceo400v2sa17814/2sc4644+22sa17842sa1781 PDF

    2SC4548E

    Abstract: 2SA1740 2SC4548 transistor 2sa1740
    Contextual Info: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.


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    en31882sa1740/2sc45482sa17402sc4548e+22sc4548transistor 2sa1740 PDF

    2SA1740

    Abstract: 2SC4548 ITR04445
    Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.


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    enn31882sa1740/2sc454825max2sa1740+22sc4548itr04445 PDF

    2SC4548

    Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity


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    2sa1740250mm22sa1740/2sc4548-----12sa1740/2sc4548+2250mm2xoi2sc4548 PDF

    free transistor and ic equivalent data

    Abstract: "transistor equivalent" transistor equivalent UD2195 R208
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2195 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION * The UTC UD2195 is designed for use in general purpose amplifier and low speed switching application. * Pb-free package process is adopted.


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    ud2195ud2195lud2195gud2195-ab3-r+7ud2195l-ab3-rud2195g-ab3-rot-89qw-r208-043free transistor and ic equivalent datatransistor equivalentr208 PDF

    2SC5606

    Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


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    2sc56062sc5606-t1transistor 3504 necnec japan 3504 PDF

    Contextual Info: Ordering number : EN 3520 i _ 2SA1784/2SC4644 No.3520 >' + 1 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P lanar Silicon Transistor SAiYO High Voltage Driver Applications F e a tu re s • Adoption of MBIT process •High breakdown voltage Vceo —400V


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    2sa1784/2sc46442sa17845170ta PDF

    2SC5606

    Abstract: 2SC5606-T1 ic ta 7698
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


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    2sc56062sc5606-t1ic ta 7698 PDF

    marking NEC rf transistor

    Abstract: nec npn rf
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted


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    nesg2107m33nesg2107m33-t3nesg2107m33-anesg2107m33-t3-a+2marking nec rf transistornec npn rf PDF

    10l82

    Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
    Contextual Info: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V


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    2sa1784/2sc46442sa17842034/2034asc-43+67tlt17d7b10l822sc4644to-92 vceo400v2sar2tj transistor PDF

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


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    2sc5602s21e22sc5602-t1nec 8725+2marking twnec 2561 PDF

    Contextual Info: MCH6545 Ordering number : EN8953 MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    en8953mch6545 PDF

    NE66219

    Abstract: NEC66219 2SC5606
    Contextual Info: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


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    ne662192sc5606nec66219ne66219-t1+52sc5606-t1ne66219-a2sc5606-ane66219-t1-a2sc5606-t1-a PDF

    2SC5606

    Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


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    2sc56062sc5606-a2sc5606-t12sc5606-t1-a+3m8e0904eultra low noise npn transistornec microwave PDF

    Contextual Info: CPH5518 Ordering number : ENA0492A SANYO Semiconductors DATA SHEET CPH5518 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


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    ena0492acph5518cph3116cph3216+1a0492-8/8 PDF

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ade-a08-003gdiode bb102rf transistor 10ghz low noisetv tuner diagram lg rf+7vco 9ghz 10ghztransistor gaas fet low noise nf 1.6db2sc4784fultra high frequency fets or transistorsa08 smd transistorlg tv electronic diagramsmd transistor fet PDF

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ade-a08-003e3sk238g1 smd transistorsmall signal audio fet+7bb303smd transistor g1smd transistor 070 rhitachi all fet audio applicationhitachi discrete dual fetdual transistor 6 pin smd 327hitachi 2sj PDF

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


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    ade-a08-003ehitachi smd transistorssmall signal audio fethitachi small signal+7tv tuner diagram lg rfnf transistor arrayg1 smd transistorbb3043sk238bb405 equivalentsmd 015 PDF

    Contextual Info: CPH5518 Ordering number : ENA0492A SANYO Semiconductors DATA SHEET CPH5518 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


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    cph5518ena0492acph3116cph3216+1a0492-8/8 PDF

    MCH6545

    Contextual Info: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    mch6545en8953 PDF

    Contextual Info: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    en8953mch6545 PDF