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NE66219 Abstract: NEC66219 2SC5606 Contextual Info: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package	Original	ne66219 2sc5606 nec66219 ne66219-t1 +52sc5606-t1 ne66219-a 2sc5606-a ne66219-t1-a 2sc5606-t1-a	PDF

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NE66219

Abstract: NEC66219 2SC5606
Contextual Info: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

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ne66219 2sc5606 nec66219 ne66219-t1 +5

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