TRANSISTOR AC 128 Search Results

germanium transistor ac 128

Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
Contextual Info: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*

AC128

Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

wiring diagram OMRON CPM1A-30CDR

Abstract: CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA
Contextual Info: R Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include AC inputs/relay outputs, DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the

germanium transistor ac 128

Abstract: AC 128 pnp transistor AC128 AC128K germanium transistoren transistor ac 128 valvo valvo transistoren AC 128 valvo germanium
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 K GERMANIUM - PNP - TRANSISTOR für Endstufen als Transistorpaar für Gegentakt-B-Schaltungen Mechanische Daten: Gehäuse: Metall, JEDEC TO-1, 1 A 3 nach DIN 41 871 mit ) Kühlklotz Alle Elektroden sind vom Gehäuse isoliert.

TRANSISTOR A850

Abstract: transistor ti pb3 Kyocera Kinseki LC65104 vinco power modules LC65102A LC65104A 0LA12 POE-400 POe400
Contextual Info: Ordering number: EN3653B CMOS LSI LC65102A, LC65104A 4-bit Single-chip Microprocessors OVERVIEW The LC65102A and LC65104A are 4-bit, single-chip microprocessors that incorporate 2 Kbyte ROM and 128 x 4-bit RAM , and 4 Kbyte ROM and 256 x 4-bit RAM , respectively, making them ideal for timer

AFP0801

Contextual Info: smallPLC_015-074.QX 2004.6.16 2:53 PM Page 33 FP0 Suitable for installation virtually anywhere. • Features I/O10 points Up to 128 I/O 1. Measures only W25 ҂ H90 ҂ D60 mm 2. Expandable 128 points by adding three units. This PLC is a stacking expansion type

27C101

Abstract: 230D1 transistor x1 3001 DPV27C101-250
Contextual Info: DENSE-PAC MICROSYSTEMS 07E D | 275^415 D P V 2 7 C DDD0S5Ö 5 ï~ 1 0 1 128KX8 CMOS EPROM MONOLITHIC - PRELIMINARY D E S C R IP T IO N : The DPV27C101-250, 300 is a high-speed 128KX 8 UV erasable, electrically programmable read only memory EPROM . It is especially well suited for applications

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 2 — 15 May 2012 Preliminary data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

H13B1

Abstract: HIIAA1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

transisTOR C124

Abstract: transistor c114 transistor c114 diagram c124 transistor c107 TRANSISTOR TRANSISTOR C107 transisTOR C123 capacitor 10u 16v G103 1kV transistor c111
Contextual Info: Improved Low Cost Triple CRT Driver CORPORATION CVA2411TX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1280 x 1024 Resolution with Pixel

transisTOR C124

Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
Contextual Info: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz

Philips MAB8021

Abstract: JZ 1-1A 8048 microcontroller 84xx family MAB8021 7475b sl 7284 MAB84XX mab84xx family interfacing the 2732 eprom
Contextual Info: MAB84X1 MAF84X1 MAF84AX1 FA M ILY SINGLE-CHIP 8-BIT MICROCONTROLLER D ESC RIPTIO N The MAB84X1 family of microcontrollers is fabricated in NMOS. The family consists of5devices: • MAB8401 — 128 bytes RAM, external program memory, with 8-bit LED-driver 10mA ,

h13b1

Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

CNV17

Abstract: cny17-2 MZ 9 TRANSISTOR CNY17 CNY17-1 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Ik VDE UL CSA ® ® 8ETI 8SMKO DEMKO NEMKO BABT GlobaJOptofeoIator 6-Pln DIP Optolsolators Transistor Output CNY17-1 CNY17-2* CNY17-3* [CTR •40-60%J [CTR ■09-128%] [CTR >100-200%] T h e C N Y 1 7 - 1 , C N Y 1 7 - 2 and C N Y 1 7 - 3 d e v ic e s co n sist of a gallium

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

UT-090C-25

Abstract: BLF178XR BLF178 UT-141C 001aan207
Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

J28AQ

Abstract: .5E2
Contextual Info: NMC27C51 PRELIMINARY National sJkSemiconductor NMC27C51 Very High Speed Version 131,072-Bit 16k x 8 UV Erasable CMOS PROM Pin Compatible with 128k Bipolar PROMs General Description Features The NMC27C51 is a very high-speed 128k, UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

Philips MAB8021

Abstract: 7Z8613 8048 microcontroller 84xx family MAB8441 MAB84XX B441 MAB84 MAB8401 MAB8021
Contextual Info: M AB84X1 M A F 84X 1 M A F84AX1 FA M IL Y SINGLE-CHIP 8-BIT MICROCONTROLLER DESCRIPTION The MAB84X1 fam ily o f m icrocontrollers is fabricated in NMOS. The fam ily consists o f 5 devices: • MAB8401 — 128 bytes RAM, external program memory, w ith emulation of M A B /F8422/42* possible

Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

Contextual Info: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is

FX2N-16EX-ES/UL

Abstract: mitsubishi FX0N-40MR-ES/UL mitsubishi FX0N-8Ex-Es mitsubishi FX0N-60MR-ES FX2N-48ER-DS fx2n 8eyt ess mitsubishi FX0N-60MT-DSS FX2N-16EYR-ES/UL FX2N-48ET-DSS FX0N-40MT
Contextual Info: MELSEC FX0N/FX2N Das Erweiterungskonzept SYSTEMBESCHREIBUNG Digitale Ein-/Ausgänge Zur Erweiterung der MELSEC FX0N-/FX2NGrundgeräte stehen verschiedene modulare und kompakte Erweiterungsgeräte zur Verfügung. Die modularen Erweiterungsgeräte enthalten z. B. nur digitale Ein-/Ausgänge und