TRANSISTOR AC 128 Search Results

wiring diagram OMRON CPM1A-30CDR

Abstract: CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA
Contextual Info: R Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include AC inputs/relay outputs, DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the

TRANSISTOR A850

Abstract: transistor ti pb3 Kyocera Kinseki LC65104 vinco power modules LC65102A LC65104A 0LA12 POE-400 POe400
Contextual Info: Ordering number: EN3653B CMOS LSI LC65102A, LC65104A 4-bit Single-chip Microprocessors OVERVIEW The LC65102A and LC65104A are 4-bit, single-chip microprocessors that incorporate 2 Kbyte ROM and 128 x 4-bit RAM , and 4 Kbyte ROM and 256 x 4-bit RAM , respectively, making them ideal for timer

AFP0801

Contextual Info: smallPLC_015-074.QX 2004.6.16 2:53 PM Page 33 FP0 Suitable for installation virtually anywhere. • Features I/O10 points Up to 128 I/O 1. Measures only W25 ҂ H90 ҂ D60 mm 2. Expandable 128 points by adding three units. This PLC is a stacking expansion type

H13B1

Abstract: HIIAA1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

transisTOR C124

Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
Contextual Info: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz

Philips MAB8021

Abstract: JZ 1-1A 8048 microcontroller 84xx family MAB8021 7475b sl 7284 MAB84XX mab84xx family interfacing the 2732 eprom
Contextual Info: MAB84X1 MAF84X1 MAF84AX1 FA M ILY SINGLE-CHIP 8-BIT MICROCONTROLLER D ESC RIPTIO N The MAB84X1 family of microcontrollers is fabricated in NMOS. The family consists of5devices: • MAB8401 — 128 bytes RAM, external program memory, with 8-bit LED-driver 10mA ,

h13b1

Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

UT-090C-25

Abstract: BLF178XR BLF178 UT-141C 001aan207
Contextual Info: BLF178XR; BLF178XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1.

Philips MAB8021

Abstract: 7Z8613 8048 microcontroller 84xx family MAB8441 MAB84XX B441 MAB84 MAB8401 MAB8021
Contextual Info: M AB84X1 M A F 84X 1 M A F84AX1 FA M IL Y SINGLE-CHIP 8-BIT MICROCONTROLLER DESCRIPTION The MAB84X1 fam ily o f m icrocontrollers is fabricated in NMOS. The fam ily consists o f 5 devices: • MAB8401 — 128 bytes RAM, external program memory, w ith emulation of M A B /F8422/42* possible

2SK1282

Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

TRANSISTOR mcr 100-8

Abstract: AFC8503S
Contextual Info: Programmable Controller FP-X0 Conforming to Low Voltage and EMC Directive New Multi-functional & Economical PLC Body equipped with combined relay and transistor output L30R Super-high processing speed 80 ns/step 0 to 3000 steps for ST command Number of I/O points

photo interrupter module h13a1

Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

hafo

Abstract: KF-38E KYOCERA 400P Crystal CST ceramic resonators KF-38E LC5872 LC5873 LC5874 LC5876 M 9639 transistor
Contextual Info: Ordering number:EN3956C SAiYO No. 3956C ¡I1 _ C M O S LSI LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip Overview Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit

Philips MAB8021

Abstract: MAB8021 2764 RAM 64 bit 8048 microcontroller MAB8048 MAB8401 MAB84X1 MAF84AX1 MAF84X1 maf8421
Contextual Info: MAB84X1 M AF84X1 M A F84AX1 F A M IL Y S IN G LE-C H IP 8-BIT M ICROCONTRO LLER DESCRIPTION The MAB84X1 fa m ily o f m icrocontrollers is fabricated in NMOS. The fa m ily consists o f 5 devices: • MAB8401 — 128 bytes RAM, external program memory, w ith 8 -b it LED-driver 10m A ,

SE012

Abstract: MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876
Contextual Info: Ordering num ber:EN 3956C C M O S LSI No. 3956C LC5872, LC5873, LC5874, LC5876 SANYO i 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip X. / // Overview X -j-.r Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

HLX*8

Abstract: HLX6228
Contextual Info: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

900156

Abstract: HX6228 smd a7 transistor
Contextual Info: Honeywell Military & Space Products HX6228 128K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS’“ IV Silicon on Insulator SOI 0.7 |im Process (LeN= 0.55 |im) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C)

Transistors smd A7H

Abstract: HX6228
Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |a,m Process (Leff= 0.55 |a,m) • Read/Write Cycle Times < 16 ns (Typical) < 2 5 ns (-55 to 125°C)

hx6228

Abstract: MIL-PRF38535
Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

Transistors smd A7H

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 p.m Process (Lefl= 0.55 |xm) • Read/Write Cycle Times < 16 ns (Typical) < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 n.m Process (Leff= 0.55 |om) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x10 rad(Si02)