TRANSISTOR AC Search Results
TRANSISTOR AC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR AC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA |
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2SC4815Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. |
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2sc4815 | |
2SC4813Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators. |
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2sc4813 | |
2SA1845Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators. |
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2sa1845 | |
2SA1847Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators. |
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2sa1847 | |
tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
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power247tmtip122 tip127 audio boardbuk 450-1000transistor selection guide+7 | |
2SA1843Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators. |
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2sa1843 | |
2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
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2sc5170100hz110mvtypx10-3+5 | |
MMBT2907A
Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
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mmbt2907mmbt2907ammbt2222mmbt2222a+3 | |
2sa1929Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for |
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2sa1929-100v300ma100hz+3 | |
MMBT2907
Abstract: MMBT2222 MMBT2222A MMBT2907A
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mmbt2907mmbt2907ammbt2222mmbt2222a+1 | |
MMBT2907
Abstract: MMBT2907A MMBT2907 ON MMBT2222 MMBT2222A
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mmbt2907mmbt2907ammbt2222mmbt2222a+5 | |
MMBT2222ATL1
Abstract: MMBT2907ATL1 MMBT2907ALT1 MMBT2222LT1 MMBT2907LT1 hFE is transistor MMBT2907LT
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mmbt2907lt1mmbt2907alt1mmbt2222lt1mmbt2222atl1+7 | |
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MMBTSA1015Contextual Info: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended. |
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mmbtsa1015lt1mmbtsc1815lt1ot-23150ma+3 | |
TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
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ot-623fot-323ot-23ot-89+14 | |
MMBTSA1015Contextual Info: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. |
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mmbtsa1015mmbtsc1815ot-23150ma+2 | |
hFE-200 transistor PNPContextual Info: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended. |
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mmbtsa1162mmbtsc2712ot-23100ma+2 | |
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Contextual Info: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended. |
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mmbtsa1162mmbtsc2712ot-23100ma+1 | |
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Contextual Info: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended. |
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mmbtsa1015lt1mmbtsc1815lt1ot-23150ma+2 | |
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Contextual Info: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. |
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mmbtsa1015mmbtsc1815ot-23150ma+2 | |
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Contextual Info: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended. |
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mmbtsc1815lt1mmbtsa1015lt1ot-23150ma+1 | |
2sa1048 transistor
Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
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2sa10482sc2458100ma2sa1048 transistor+4 | |
2sa1048 transistor
Abstract: 2SA1048 2sc2458 equivalent 2SC2458
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2sa10482sc2458100ma2sa1048 transistor+1 | |