TRANSISTOR A4I Search Results

BUK438W-800A

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

ss 297 transistor

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

TRANSISTOR BU2525DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

UMW13N

Abstract: FMW13 T148 T149
Contextual Info: h Transistors UM W13 N/FMW 13 î — h 7 > v ^ ^ / D u a l Mini-Mold Transistor x h î $ * V 7 J l ' 7 l s - t B N P N y ‘j 3 > h ÿ > y Z $ Epitaxai Pianar NPN Silicon Transistor ¡S lâ tiH iffl/R F Amplifier • £fîfé\ri*0/D im en sio n $ Unit : mm

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated

VPT05155

Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

transistor sb 772

Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
Contextual Info: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",

221A-06

Abstract: AN569 MTP8N50E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to

BC 939 Transistor Data

Abstract: MJ4647 MJ4646
Contextual Info: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli­

DG41

Contextual Info: 1 9 -47 28 : R ev 2 :8 / 9 5 I m p r o v e d , Quad, SPST A n a l o g S w i t c h e s Description New Features ♦ Plug-In Upgrade fo r Industry-Standard DG411/DG412/DG413 ♦ Improved ros ON Match Between Channels (3& max) ♦ Guaranteed r F L A T ( O N ) Over Signal Range (A4ii)

mosfet 600V 50A

Contextual Info: rz7 SGS-THOMSON Ä 7# M ûœ ËŒ O T «® S T T A 9 0 1 2 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 45A I f (a v ) V (typ) 65ns Vf (max) 1.85V K2 A2 K1 A1 A2 Kl IE O 1200V rrm trr PRELIM IN ARY DATA

SE 442

Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Contextual Info: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­

3 phase igbt INVERTER ac motor

Abstract: 7b15a
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 7B 15A 60A integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase

g50n

Contextual Info: STD12NE06L N - CHANNEL 60V - 0.08 Q - 12 A - DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss S T D 12N E 06L 60 V Id RDS on < 0.12 Q 12 A . TYPICAL F b s (o n ) = 0.09 Ü . EXCEPTIONALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 1 0 0 % AVALANCHE TESTED

ICL8062

Abstract: LED Driver add 5201 camera 24 pin ICL8061 ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera
Contextual Info: ICL8061/8062 Camera Exposure Control Circuits FEATURES • 50pA to 500/iA photocell current range • Low power dissipation • Track & hold ckt for mirror-up or exposure memory use. • Direct linearized inputs for aperture values, sensitivity, manual shutter speed, etc.

stepping motor EPSON EM - 234

Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system

3x4 matrix keypad

Abstract: mk5089 keypad 3x4 pin configuration keypad 3x4 8 pin configuration mk5089 DTMF circuit diagram of keypad interface with dtmf Mostek MK5089 keypad 3x4 Mostek MK5380 12 key 3x4 KEYPAD 14 pin
Contextual Info: iS THOMSON COMPONENTS MOSTEK DATA SHEET COMMUNICATIONS PRODUCTS 10-NUMBER REPERTORY TONE/ PULSE DIALER MK5376 FEATURES □ Converts push-button inputs to both DTMF and pulse signals □ Stores ten 16-digit telephone num bers including last num ber dialed V-

ygc 801

Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
Contextual Info: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart­ ments and Agencies of the Department of Defense.

68hc68r2

Abstract: 68hc68 3771 80C51 CDP68HC05C4 CDP68HC05C8 CDP68HC05D2 CDP68HC68R1 CDP68HC68R2
Contextual Info: 33 C D P 68H C 68R 1 H a rris CD P 6 8 HC68R2 C M O S 1 2 8 W o rd C D P 6 8 H C 6 8 R 1 and 2 5 6 W o rd (C D P 6 8 H C 6 8 R 2 ) by 8 -B it S tatic RAMs J a n u a ry 1991 P in o u t F e a tu re s • PACKAGE TYPE E TOP VIEW Fully S tatic O p eratio n

M3P1

Abstract: KD 2107 X3032
Contextual Info: XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families £ Product Description Features • Complete XACT Development System - Schematic capture, automatic place and route - Logic and timing simulation - Interactive design editor for design optimization