TRANSISTOR A209 Search Results

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and

A2093

Abstract: 2SA2093
Contextual Info: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and

transistor A2097

Abstract: 2SA2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

2SA2097

Abstract: transistor pnp a110
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

A2097

Abstract: transistor A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)

2SC5879S

Abstract: 2sc5879 2SA2091S SC-72 a2091
Contextual Info: 2SA2091S Transistors Medium power transistor −60V, −1A 2SA2091S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −0.5A, IB = −50mA)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features

2sa2097

Abstract: transistor A2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)

A2096

Abstract: 2SA2096 2SC5881
Contextual Info: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 zExternal dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 zFeatures

a2096

Abstract: 2SA2096 2SC5881
Contextual Info: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

1N4148 SOD-123

Abstract: conn SIL2 tp1 conn sil2 4-pole bldc sensorless 12v dc brushless motor Infineon - Brushless DC Motor 24v dc motor drive circuit diagram SPEED CONTROL of DC MOTOR using 3 phase bridge co dc motor driver MANUAL 3 phase ac Induction motor h bridge dc motor speed control HISTORY
Contextual Info: User’s Manual, V 1.0, June 2003 Motor Control Development Kit A reference design for low voltage 3-phase AC induction and brushless DC motor control. Microcontrollers N e v e r s t o p t h i n k i n g . Motor Control Development Kit Revision History:2003-06 V 1.0

MIC710

Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes

mdu 2653

Abstract: mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152
Contextual Info: DATASHEET RapidChip Integrator Platform ASIC Family February 2005 Preliminary DB08-000237-03 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the