TRANSISTOR A14 Search Results

Transistor A14

Abstract: MMBTA14LT1 MMBTA13LT1
Contextual Info: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces

C214A

Abstract: 1902 transistor BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : 2005.11.30 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3.

C214A

Abstract: 1902 transistor CYStech Electronics BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit

C 2944 transistor

Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • 05014330 000373=1 1 ■ ALGR T-91-01 PROCESS VRB Process VRB NPN Small-Signal Transistor Process VRB is an NPN double-diffused silicon epitaxial planar transistor designed for generalpurpose amplifier and switching circuits.

EM7164SU16

Contextual Info: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

2851 transistor npn

Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Contextual Info: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 05DM33Ô 00037^ T ■ ALGR T-91-01 PROCESS NJ132 Process NJ132 N-Channel Junction Field-Effect Transistor Process NJ132 is an N-channel junction field-effect transistor designed primarily for high-speed switch­ ing applications, such as low O N resistance analog

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs

10 micro farad capacitor

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high

Contextual Info: ALLEGRO MICROSYSTEMS INC TB D • 05Cm336 00037L.3 T ■ ALGR T -9 1-0 1 PRO CESS NJ35D Process NJ35D Dual N-Channel Junction Field-Effect Transistor Process N J35D is a monolithic dual N-channel junction field-effect transistor designed for use as a differential amplifier. The matching characteristics

Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs

Contextual Info: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.

Contextual Info: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic

NJ28D

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process

Contextual Info: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap­ plications at frequencies of up to 450 MHz.

transistor w7

Abstract: PJ99
Contextual Info: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99

c102 TRANSISTOR

Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT

metal detector sensor

Abstract: color detector sensor A1406 HOA1406-003 Reflective Optical Sensor focused HOA1406-001 Reflective Optical Sensor IR isopropanol sensor Reflective Optical Sensor SD2410
Contextual Info: Page 1 of 4 Datasheet - HO A1406-001 Honeywell HOA1406-001 HOA Series Reflective Sensor, transistor output, metal can packaged components Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in

a144* transistor

Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

c4381

Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

D2641

Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10