TRANSISTOR A14 Search Results

Transistor A14

Abstract: MMBTA14LT1 MMBTA13LT1
Contextual Info: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces

C214A

Abstract: 1902 transistor CYStech Electronics BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 05DM33Ô 00037^ T ■ ALGR T-91-01 PROCESS NJ132 Process NJ132 N-Channel Junction Field-Effect Transistor Process NJ132 is an N-channel junction field-effect transistor designed primarily for high-speed switch­ ing applications, such as low O N resistance analog

10 micro farad capacitor

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high

Contextual Info: ALLEGRO MICROSYSTEMS INC TB D • 05Cm336 00037L.3 T ■ ALGR T -9 1-0 1 PRO CESS NJ35D Process NJ35D Dual N-Channel Junction Field-Effect Transistor Process N J35D is a monolithic dual N-channel junction field-effect transistor designed for use as a differential amplifier. The matching characteristics

Contextual Info: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.

Contextual Info: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic

NJ28D

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process

Contextual Info: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap­ plications at frequencies of up to 450 MHz.

transistor w7

Abstract: PJ99
Contextual Info: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

c4381

Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

Contextual Info: ALL EGR O MICROSYSTEMS INC R3 D • 0 5 0 4 3 3 6 0 0 0 3 7 b 7 L ■ ALGR T-91-01 P R O C E S S NJ99 Process NJ99 N-Channel Junction Field-Effect Transistor Process NJ99 is an N-channel junction field-effect transistor designed for use as either a general-purpose, high-gain amplifier or as a switch. Selected

A144ES

Abstract: a144* transistor DTA144EUA DTA144EE DTA144EKA DTA144EM DTA144ESA T106 T146 a144e
Contextual Info: DTA144EM / DTA144EE / DTA144EUA / DTA144EKA / DTA144ESA Transistor -100mA / -50V Digital transistors with built-in resistors DTA144EM / DTA144EE / DTA144EUA / DTA144EKA / DTA144ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver

Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 205 • N channel • Enhancement mode • FREDFET Type Vos /d ^DS on Package 1> O rdering Code BUZ 205 400 V 6.0 A 1.0 £2 TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 35 "C

Contextual Info: AL LE GR O M I C R O S Y S T E M S INC T3 D WÊ 0 5 0 4 3 3 Ô O Ü Ü 3 7 b S 2 • AL6R T-91-01 P R O C E S S NJ42 Process NJ42 N-Channel Junction Field-Effect Transistor Process NJ42 is an N-channel junction field-effect transistor designed for use as a high-voltage, general-purpose amplifier in applications requiring the

ECH8101

Contextual Info: ECH8101 Ordering number : ENA1422 SANYO Semiconductors DATA SHEET ECH8101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features

Contextual Info: ECH8101 Ordering number : ENA1422 SANYO Semiconductors DATA SHEET ECH8101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features

ENA1420A

Abstract: A1420 ECH8102-TL-H
Contextual Info: ECH8102 Ordering number : ENA1420A SANYO Semiconductors DATA SHEET ECH8102 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers Features

A1451A

Contextual Info: TOSHIBA 2S A1451A 2 S A 1 451 A TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0/ j s (Typ.)

2SA1432

Abstract: 2-7D101A 2SC3672 A1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V