TRANSISTOR A111 Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

41003

Contextual Info: SOLID STATE CURRENT SENSORS LDA100/LDA101/LDA110/LD A111 D E S C R IP T IO N M The LDA100/LDA101/LDA110/LDA111 are optocouplers with a single or darlirigton transistor outputs. A bi-directional or uni-directional input is available depending on which model you choose.

Contextual Info: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)

A11182

Abstract: 2sc5551a A1118-4/4
Contextual Info: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)

IC 7419

Abstract: ic marking 4410 ic 4026
Contextual Info: 15GN03NA Ordering number : ENA1110 SANYO Semiconductors DATA SHEET 15GN03NA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications • VHF, RF, MIXER, OSC, IF amplifier. Features • • High cutoff frequency : fT=1.5GHz typ.

A1111

Contextual Info: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .

CRE 6203

Abstract: IC163 Transistor NP 3773
Contextual Info: 55GN01NA Ordering number : ENA1116 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01NA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =7dB typ f=1GHz .

transistor A1111

Abstract: a1111 transistor npn Epitaxial Silicon zs 35 a1111 8 DATASHEET OF IC 741 1 307 329 082 IC 741 data sheet uA 741 IC data sheet 55GN01CA
Contextual Info: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .

transistor A1111

Abstract: free ic 7404 transistor 5104 db
Contextual Info: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz

Contextual Info: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz

2SC5551

Contextual Info: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).

Contextual Info: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).

55GN01MA

Abstract: ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
Contextual Info: 55GN01MA Ordering number : ENA1114 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =10dB typ f=1GHz .

functions of ic 4528

Abstract: A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156
Contextual Info: 55GN01SA Ordering number : ENA1115 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA UHF Wide-band Low-noise Amplifier Applications Features • • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ f=1GHz .

Contextual Info: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ f=1GHz

Contextual Info: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz

IC 8256

Abstract: A1113
Contextual Info: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .

Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

transistor A1111

Abstract: IC-7404 A1111
Contextual Info: Ordering number : ENA1111A 55GN01CA RF Transistor http://onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz Specifications Absolute Maximum Ratings at Ta=25°C Parameter

55GN01FA-TL-H

Abstract: 7308 IC
Contextual Info: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz

a1113

Abstract: application of ic 7489 55GN01FA
Contextual Info: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .

TN1L

Abstract: 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C