TRANSISTOR A 225 Search Results

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

MMT3823

Abstract: micro-T Package
Contextual Info: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

E13005-225

Abstract: e13005 2 e13005 e13005- 2
Contextual Info: E13005-225 Pb Free Plating Product Pb E13005-225 MJE Power Transistor Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

transistor npn 100w amplifier

Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Contextual Info: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

TRANSISTOR D 1785

Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: Ordering number : EN6590B CPH5506 Bipolar Transistor – 30V, (–)5A, Low VCE(sat) Complementary Dual CPH5 http://onsemi.com Applications • Relay drivers, Lamp drivers, Motor drivers Features • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

02D2G

Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

NTE338F

Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP

DIODE GP 704

Abstract: RD12MVP1 micro strip line
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power

PBSS4540X

Abstract: PBSS5540X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 04 Philips Semiconductors Product specification 40 V, 5 A NPN low VCEsat (BISS) transistor

transistor s46

Abstract: marking S46 sot89 PBSS4350X PBSS5350X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor

SC6210

Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

marking code 10 sot23

Abstract: PNP POWER TRANSISTOR SOT23 PBSS5130T free transistor equivalent book
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat BISS transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor PBSS5130T FEATURES QUICK REFERENCE DATA

SC6210

Abstract: MRC325 PBSS4330X MRC323 MRC326 MRC322 MRC327
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 28 2004 Dec 06 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor

s43 npn transistor

Abstract: mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA

PBSS5520X

Abstract: PBSS4520X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 23 2004 Nov 08 Philips Semiconductors Product specification 20 V, 5 A PNP low VCEsat (BISS) transistor

PBSS4520X

Abstract: PBSS5520X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 May 27 2004 Jun 11 Philips Semiconductors Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor