TRANSISTOR A 225 Search Results

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

MMT3823

Abstract: micro-T Package
Contextual Info: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

transistor npn 100w amplifier

Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Contextual Info: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

blf878

Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
Contextual Info: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from

PBSS4540X

Abstract: PBSS5540X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 04 Philips Semiconductors Product specification 40 V, 5 A NPN low VCEsat (BISS) transistor

transistor s46

Abstract: marking S46 sot89 PBSS4350X PBSS5350X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor

SC6210

Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

PBSS5520X

Abstract: PBSS4520X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 23 2004 Nov 08 Philips Semiconductors Product specification 20 V, 5 A PNP low VCEsat (BISS) transistor

sot23 transistor marking ZF

Abstract: PBSS4240T PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2001 Oct 31 2004 Jan 15 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T QUICK REFERENCE DATA

CBSL6

Abstract: j1305 ASI10580
Contextual Info: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is a gold metalized epitaxial silicon NPN transistor, designed for high linearity Class-AB cellular base station applications. It also operates in Class-C. PACKAGE STYLE .230 6L FLG A .040x45°

shd4322

Contextual Info: SENSITRON SEMICONDUCTOR SHD432102D TECHNICAL DATA DATA SHEET 952, REV. A Formerly Part Number SHD4322 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.

S45 marking

Abstract: PBSS5320X SC6210 PBSS4320X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X

PBSS4540X

Abstract: PBSS5540X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jan 15 2004 Nov 04 NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X

transistor s46

Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X

PBSS4480x

Abstract: PBSS5480X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X

free transistor and ic equivalent data

Abstract: PBSS4250X PBSS5250X he 380
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 08 NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X

S44 MARKING

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X

Contextual Info: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.