TRANSISTOR 8FC Search Results

Transistor 8fc

Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations

Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage

8fc marking code

Abstract: BC817 BC818 marking 8FC
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Emitter Voltage : BC817

GSBC817

Contextual Info: ISSUED DATE :2005/06/08 REVISED DATE : GSBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE

8FC SOT23

Abstract: 8fc marking code on 8gb transistor BC817 sot23 marking 8fc vebo 25 BC818 marking 8fb
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta= 25°C R ating Symbol C haracteristic Collector Emitter Voltage: BC817

8FC SOT23

Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817

HBC817

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

8FC SOT23

Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

8FC SOT23

Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

transistor 8gb sot 23

Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJD340 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Form ed fo r Surface M ount Applications No Suffix • Straight Lead (“ - I “ Suffix) ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage

BC817

Abstract: BC818 8FC SOT23
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 50 30 45 25 5 800 310 150 —6 5 ^1 5 0

BC817

Abstract: BC818 marking code fairchild marking 8FC
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC817

Abstract: BC818
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

marking 8fb

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage

8fc marking code

Abstract: TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC817 BC818
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage

marking 6d

Abstract: IPP147N12N
Contextual Info: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

marking 9D

Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

9926C

Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(

IPP05CN10N

Contextual Info: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

marking 6d

Abstract: IPD110N12N3 G
Contextual Info: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E

IPD110N12N3 G

Contextual Info: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#

IPP054NE8N

Abstract: FX23L-100S-0.5SV
Contextual Info: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#