TRANSISTOR 8722 Search Results

phd45n03

Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
Contextual Info: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHP83N03LT

Abstract: PHB83N03LT PHE83N03LT TO-220AB transistor package
Contextual Info: PHP83N03LT; PHB83N03LT; PHE83N03LT N-channel TrenchMOS transistor Rev. 01 — 23 January 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BSH108

Abstract: 03ab10 MSB003 transistor 8722
Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHT4NQ10LT

Abstract: SC-73
Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

07342

Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB100N03LT

Abstract: 03AB29
Contextual Info: PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

03ab10

Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BSH114

Contextual Info: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BSH120T

Abstract: 03ac49
Contextual Info: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

smd diode 319

Contextual Info: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PHP54N06T N-channel enhancement mode field-effect transistor Rev. 01 — 14 February 2001 Product specification M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Royal Electronics

Abstract: PHB160N03T
Contextual Info: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB30NQ15T

Abstract: PHP30NQ15T 502mj
Contextual Info: PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB73N06T

Abstract: PHP73N06T
Contextual Info: PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB47NQ10T

Abstract: PHP47NQ10T
Contextual Info: PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PHP55N03LTA; PHB55N03LTA N-channel enhancement mode field-effect transistor Rev. 01 — 30 March 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

03ad10

Abstract: PSMN008-75B PSMN008-75P
Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

Contextual Info: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.

Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: