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    Vishay Intertechnologies UMB02070E3903AB100

    MELF Resistors .4watt 390Kohm .05%
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    Mouser Electronics UMB02070E3903AB100
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    Vishay Intertechnologies UMB02070E5003AB100

    MELF Resistors .4watt 500Kohm .05%
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    Mouser Electronics UMB02070E5003AB100
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    Vishay Intertechnologies UMB02070F3003AB100

    MELF Resistors .4watt 300Kohm .05%
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    Mouser Electronics UMB02070F3003AB100
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    Vishay Intertechnologies UMB02070F3903AB100

    MELF Resistors .4watt 390Kohm .05%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UMB02070F3903AB100
    • 1 -
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    Mitutoyo Corporation 3803AB-10

    .0001-.025Inb2 |Mitutoyo 3803AB-10
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    Newark 3803AB-10 Bulk 1
    • 1 $251.00
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    03AB10 Datasheets Context Search

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    BSH108

    Abstract: 03ab10 MSB003 transistor 8722
    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 03ab10 MSB003 transistor 8722 PDF

    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 MSB003 MBB076 PDF

    03ab10

    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 03ab10 PDF