MBK106 Search Results

MBK10

Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

PHD45N03LTA

Abstract: PHB45N03LTA PHP45N03LTA a2240
Contextual Info: PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP45N03LTA in SOT78 TO-220AB

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB153NQ08LT

Abstract: PHP153NQ08LT
Contextual Info: PHP/PHB153NQ08LT N-channel TrenchMOS logic level FET Rev. 01 — 31 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

13164

Abstract: PHB129NQ04LT PHP129NQ04LT
Contextual Info: PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

BUX85

Abstract: philips power transistor bd139 BD139 NPN transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUX84; BUX85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT18

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT18; BUT18A Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A DESCRIPTION High-voltage, high-speed,

PHP27NQ11T

Contextual Info: PHP27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 17 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance

PHP45NQ11T

Contextual Info: PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 31 March 2004 M3D307 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Fast switching

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

Contextual Info: PHP73N06T; PHB73N06T TrenchMOS standard level FET Rev. 02 — 5 July 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP73N06T in SOT78 TO-220AB

Contextual Info: BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHP71NQ03LT

Abstract: PHB71NQ03LT PHD71NQ03LT
Contextual Info: PHP/PHB/PHD71NQ03LT TrenchMOS logic level FET Rev. 01 — 25 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP71NQ03LT in SOT78 TO-220AB

Contextual Info: PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BUK9540-100A

Abstract: BUK9640-100A
Contextual Info: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:

BUK7623-75A

Contextual Info: BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHB152NQ03LT

Abstract: PHP152NQ03LT
Contextual Info: PHP/PHB152NQ03LT TrenchMOS logic level FET Rev. 01 — 20 February 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP152NQ03LT in SOT78 TO-220AB

PSMN004-60B

Abstract: PSMN004-60P
Contextual Info: PSMN004-60P/60B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN004-60P in SOT78 TO-220AB

BUK9560-100A

Abstract: BUK9660-100A BUK956
Contextual Info: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

K 3264 fet transistor

Abstract: BUK7608-55A 03NH45 BUK7508-55A VA140
Contextual Info: BUK7508-55A; BUK7608-55A TrenchMOS standard level FET Rev. 02 — 17 January 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHB101NQ03LT

Abstract: PHD101NQ03LT PHP101NQ03LT PHU101NQ03LT
Contextual Info: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB

OC202

Abstract: BUK7520-100A BUK7620-100A
Contextual Info: BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 — 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9520-100A

Abstract: BUK9620-100A
Contextual Info: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9535-100A

Abstract: BUK9635-100A
Contextual Info: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.