PHB32N06LT |
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NXP Semiconductors
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PHB32N06LT - N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 34 A; Qgd (typ): 8.5 nC; RDS(on): 37@10V40@5V mOhm; VDSmax: 60 V |
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PHB32N06LT |
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Philips Semiconductors
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N-Channel Enhancement Mode Field Effect Transistor |
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PHB32N06LT,118 |
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NXP Semiconductors
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N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 34 A; Qgd (typ): 8.5 nC; RDS(on): 37@10V40@5V mOhm; VDSmax: 60 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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PHB32N06LT,118 |
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NXP Semiconductors
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PHB32N06 - TRANSISTOR 34 A, 60 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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PHB32N06LT/T3 |
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NXP Semiconductors
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N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 34 A; Qgd (typ): 8.5 nC; RDS(on): 37@10V40@5V mOhm; VDSmax: 60 V |
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Original |
PDF
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