TRANSISTOR 86 Y 87 Search Results

m28 transistor

Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Contextual Info: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z

TCA 700 v

Abstract: TCA 700 TCA 160 TCA 150 t 6 pin TRANSISTOR SMD CODE PA A 671 transistor TR 671 TOP 2 TCA971 Tca671 671 transistor
Contextual Info: 47E D m ÖEBSbQS 003MÖ70 b « S I E G SI EM EN S A K T I E N G E S E L L S C H A F Transistor Array with 5 NPN Transistors TCA 671 TCA 871 TCA 971 TCA 991 Features Bipolar IC • • • • • Versatile use Slight l/BE and B deviations High output current

Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.

TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as

transistor BD 512

Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­

MRF9331

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.

E3Z-T81-L

Abstract: E3Z-T86-L E3Z-LS81 RELAY OMRON G6 E3Z-L61 E3Z-T86-D E3z-t61 fgs npn E3Z-b86 E3Z-LS61 adjustment
Contextual Info: Photoelectric Sensor with Built-in Amplifier E3Z For almost all binaray-detection applications, you can make selection from the E3Z Basic performance East-tooperate Reliability Globalization Environmental protection Features Photoelectric Sensor with built-in amplifier is applicable

LM723CN

Abstract: 8563 linear Regulated Power Supply Schematic Diagram for constant 5V and 2A LM723CN negative h8563 LM723 R2A3 LM723 0 to 15 voltage regulator power supply LM723 regulator BLOCK DIAGRAM lm723cn regulator
Contextual Info: LM723 LM723C Voltage Regulator General Description Features The LM723 LM723C is a voltage regulator designed primarily for series regulator applications By itself it will supply output currents up to 150 mA but external transistors can be added to provide any desired load current The circuit

Asy transistor

Abstract: transistor ASY TRANSISTOR ASY 77 asy70 germanium transistor asy ASY48 TRANSISTOR ASY 75
Contextual Info: ASY48, ASY70 PNP-Transistors for switching applications A S Y 48 and A S Y 7 0 are alloyed PNP-germanium transistors in a case 1 A 3 DIN 41 871 sim. TO-1 . The leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case. These transistors are particularly

lm723

Abstract: a37 zener LM723CH B458 LM723 0 to 15 voltage regulator power supply A125 LM723/LM723C LM723 high voltage floating regulator LM723H application lm723
Contextual Info: LM723 LM723C Voltage Regulator General Description Features The LM723 LM723C is a voltage regulator designed primarily for series regulator applications By itself it will supply output currents up to 150 mA but external transistors can be added to provide any desired load current The circuit

Contextual Info: SHARP LZ2314AK 1 /3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION LZ2314AK is a 1/3-type 6.0 mm solid-state im­ age sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 270 000 pixels (horizontal 542 x vertical

transistor manual book FREE

Abstract: transistor book FREE E3Z-T67 E3Z-R86 E3Z-L61 Fork sensor E3Z-LS61 E3Z-G61
Contextual Info: F502-EN2-04.book Seite 43 Dienstag, 26. Juli 2005 5:48 17 General purpose sensors in compact plastic housing E3Z E3Z • Compact housing size and high power LED for excellent performance-size ratio • IP67 and IP69k for highest protection in wet environments

Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Contextual Info: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.

Avantek amplifier 8 12 GHz

Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
Contextual Info: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

20111

Contextual Info: ERICSSON ^ PTB 20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP

Contextual Info: AMIS-30543 Micro-Stepping Motor Driver Introduction The AMIS−30543 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and an SPI interface with an external microcontroller. It has an on−chip voltage regulator, reset−output and watchdog reset, able to supply

Contextual Info: AMIS-30543 Micro-Stepping Motor Driver Introduction The AMIS−30543 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and an SPI interface with an external microcontroller. It has an on−chip voltage regulator, reset−output and watchdog reset, able to supply

BIPOLAR MICROSTEPPING DRIVER

Abstract: capacitor 225 esm
Contextual Info: AMIS-30543 Micro-Stepping Motor Driver Introduction The AMIS−30543 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and an SPI interface with an external microcontroller. It has an on−chip voltage regulator, reset−output and watchdog reset, able to supply

transistor ESM 434

Abstract: esm 489 data transistor ESM 217 ESM 382 esm 112 390 AMIS-30543 ESM 467
Contextual Info: AMIS-30543 Product Preview Micro-Stepping Motor Driver Introduction The AMIS−30543 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and an SPI interface with an external microcontroller. It has an on−chip

Optical Switch HY301-21

Abstract: E3S-AR41 turbo timer
Contextual Info: Built-in Amplifier Photoelectric Sensor Medium Size E3S-A CSM_E3S-A_DS_E_3_1 Be sure to read Safety Precautions on page 10. Ordering Information Built-in Amplifier Photoelectric Sensors Sensing method Appearance Connection method Red light Sensing distance

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

AIC1652PS

Abstract: AIC1652PSTR AIC1652 1N5819 AIC1652CSTR 150UH rb67 AIC1652CST
Contextual Info: AIC1652 Micro-Power Inverting DC/DC Controller FEATURES DESCRIPTION The AIC1652 is a high performance inverting 2.4V to 7V Input Voltage Operation. DC/DC controller, designed to drive an external Adjustable Output Voltage up to -40V. power switch to generate programmable nega-

SCR TRANSISTOR

Abstract: TO92HS R/PCR 6061 triac CERSOT-23 sot89 diode bm scr 209
Contextual Info: Mechanical Drawings All Dimensions in inches mm . Case 106 AX-5W . 0 3 7 ( 0 . 9 4 ] . 0 4 3 ( 1 . 0 9 ] 1 . 0 ( 2 5 . 4 ) M I N I MUM 3 3 0 ( 8 . 3 8 ) 3 5 0 ( 8 . 8 9 ) 1 30(3 .30) 145 (3.68) 1 . 0 ( 2 5 . 4 ) MI NI MUM Case B-M Case A .20(5.1) .22(5.6)