TRANSISTOR 81 110 W 63 Search Results

NE24318

Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

SCHEMATIC DIAGRAM OF POWER factor controller DEVI

Abstract: BCR450 AN105 infineon TDA4863 application note TDA4863G led constant current driver 110v, 350mA EVALLED-TDA4863-40W transformer 230V 16V 350mA AN186 90V, 350mA LED driver
Contextual Info: BCR4 50, TDA48 63 40W LED Street an d Ind oor li ghtin g de mons trator boa rd Application Note AN186 Revision: 1.0 Date: 18.12.2009 www.infineon.com/lighting RF and Protecti on Devi c es Edition 18.12.2009 Published by Infineon Technologies AG 81726 Munich, Germany

400 watt hf mosfet

Abstract: 200 watt hf mosfet LF40100M "RF MOSFET" VDD400
Contextual Info: an A M P company RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz LF40100M V2.00 Features • • • • Gold Metallized • Common Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Lower Capacitances for Broadband Linear Operation

Ex-92

Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
Contextual Info: Level and Pressure Product Information Vibrating level switches Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 3 Vibrating level switches overview . 7

philips ferroxcube 4c6

Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
Contextual Info: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER

sot446

Abstract: LWE2010S SC15 SOT446A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

NE243187

Abstract: NE243188
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

transistor K 1413

Abstract: 5607 transistor E243287 chip die npn transistor NE243287
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

HP8542

Abstract: HP11590B transistor nf5 F581
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz

Contextual Info: DATASHEET Lighting Solutions CE300AHX, CE300BHX, and CE300CHX MERCURY-XENON POWER SUPPLY Key Features • Line Input: 100 - 240 VAC, ± 10%, 47 - 63 Hz, 6.5 Arms max.  Environmental: 0° C to 50° C operating.  Altitude: -1000 ft. to 12,000 ft. -305 m to 3658 m MSL.

TT2140

Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Contextual Info: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

transistor SMD DK rc

Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications

IDG-500

Abstract: BLF244 idg 500 NCO8701 NCO8702
Contextual Info: APPLICATION NOTE Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 CONTENTS

Contextual Info: an A M P com pany TO-8 Packaged Voltage Controlled Oscillators 300 MHz - 1 0 GHz MLO 60000 Series V3.00 Features • • • • • PCB Compatible Low Cost Mil and Commercial Designs Broad Frequency Ranges Low Phase Noise Description M/A-COM’s range of TO-8 voltage controlled oscillators

AT60535

Contextual Info: AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Whpt H E W L E T T mL'tia P a c k a r d Features • • • • • 35 micro-X Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz

BFQ235A

Abstract: BFQ255A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D066 BFQ235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION • High breakdown voltages

2sc2065

Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221
Contextual Info: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS

BF588

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor