9275 transistor
Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Contextual Info: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.
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mpsa429275 transistortransistor k 208mpsa42 multicomp |
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MPSA42
Contextual Info: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.
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Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Contextual Info: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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2N3442
Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
Contextual Info: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage
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2n3442transistor 2n3442npn 9016 transistortransistor 9016 npn |
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pin configuration transistor 2N2222A
Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
Contextual Info: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.
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2n2222apin configuration transistor 2n2222anpn transistor 2n2222a2n2222a 0612+2ic 358of 2n2222a
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transistor 7333
Abstract: BU426A
Contextual Info: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.
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BUW12A
Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
Contextual Info: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.
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buw12atransistor 1000v 6af 9016 transistornpn transistor vceo 1000v |
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high power transistor
Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Contextual Info: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.
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2n3772high power transistortransistor 7333transistor 358 to3+5transistor 9282n3772 applicationstransistor 358 to-3358 transistor2n3772a
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Transistor C G 774 6-1
Abstract: 2N3440
Contextual Info: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74
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power switching 10 amp 60V
Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).
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mj10012power switching 10 amp 60vmj10018805 voltage regulator+5100 amp npn darlington power transistorsnpn darlington 10a 400vnpn darlington transistor 150 wattsmj-10012npn darlington transistor 200 watts
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transistor for horizontal deflection output
Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
Contextual Info: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.
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bu406transistor for horizontal deflection outputnpn transistor 50a 400v32 tv power transistor+2transistor bu406358 transistor
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MPSA44
Abstract: ptc c 995 MA 2810
Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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npn darlington transistor 200 watts
Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
Contextual Info: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.
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bu806npn darlington transistor 200 wattstransistor 7333bu806 equivalent+11462, transistor
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pin configuration pnp transistor mpsa92
Abstract: mpsa92 MPSA42 9016 transistor
Contextual Info: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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mpsa92mpsa42pin configuration pnp transistor mpsa929016 transistor |
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MPSA44
Abstract: 9016 transistor
Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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TO-92 CASE MPSA06
Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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mpsa06to-92 case mpsa06f 9016 transistor7333 a+4mpsa06 equivalenttransistor mpsa06transistor 7333mpsa06 transistor
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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mpsa067333 atransistor mpsa06npn 9016 transistor+1transistor 7333
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Contextual Info: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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bf199bf199 equivalenttransistor npn bf199bf199 transistor+1bf199 rf
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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bf199bf199 equivalentbf199 transistorf 9016 transistor+6transistor 9016 npn03 transistordata bf199ic 9400bf199 rftransistor npn bf199
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80 amp 30v npn darlington
Abstract: 2N6388 npn darlington transistor darlington power transistor 10a
Contextual Info: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage
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2n6388o-22080 amp 30v npn darlingtonnpn darlington transistor+1darlington power transistor 10a
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BUX48
Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
Contextual Info: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48
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