TRANSISTOR 5551 Search Results

BR 5551

Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP

NCC 5551

Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : NCC 5551 High Voltage NPN Transistor for General Purpose and Telephony Applications

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

CC5551

Abstract: transistor cc 5551
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : CC 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.

cd5551

Abstract: CD 5551 5551 2N5551
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5551 9AW TO-92 CBE MARKING : CD 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.

str g 5551

Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

ZXTN

Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Contextual Info: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating

4491E

Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

2N2222A LCC1

Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

Contextual Info: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A

MMDT5451

Abstract: equivalent of 5401 transistor transistor 5551 PNP5401 5401 transistor npn-pnp dual BR 5551
Contextual Info: MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor Dual Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching

5551

Abstract: 5551 transistor 5551 datasheet 5401 555-1
Contextual Info: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance

PNP5401

Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package

Contextual Info: MMDT5401 Dual Transistor NPN/PNP SOT-363 Features — Epitaxial Planar Die Construction — Complementary NPN Type Available(MMDT 5551) — Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

5551

Abstract: MMDT5401
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching

BR 5551

Abstract: code marking KNM BR N 5551
Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package

MMDT5401

Abstract: K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F
Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT5401 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package

K4m transistor

Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C2 Case: SOT-363, Molded Plastic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)

5551 transistor

Contextual Info: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃