TRANSISTOR 5 GR Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

BFR106

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

SOT23 W1P NXP

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

DIN 3021-3 STANDARD

Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Contextual Info: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain

transistor 335

Abstract: transistor IR TRANSISTOR ir receiver transistor 330 transistor NJL5171K INFRARED REMOTE CONTROL njl51
Contextual Info: OPTOELECTRONICS SEMICONDUCTOR ELEMENTS D [Photo R eflector] — Super Mini Type Transistor Output- [— N JL516 1 K /6 3 K /6 5 K /6 7 K . 2-10 NJ L 5 1 9 1 K /9 3 K /9 5 K . 2-63 Super Mini Type Transistor Output_

Contextual Info: Composite Transistors XN0A312 XN1A312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 2.8+0.2 –0.3 4 5˚ 3 Two elements incorporated into one package.

Contextual Info: Composite Transistors XP0C301 XP1C301 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) Unit: mm (0.425) 0.20±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -4 5 V Collector-Emitter Voltage V ceo -4 5 V Emitter-Base Voltage V ebo Collector Current

9y transistor

Contextual Info: Composite Transistors XP06543 Silicon NPN epitaxial planar transistor 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)

ULN2046A-1

Abstract: transistor array A9034 ULN2031A
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC =13 D • G5 0 4 3 3 Ô S E M I C O N D S / ICS 000301b M ■ ALGR 93 D 038 16 & * 7 ^ 3 - 2 5 ' ULN-2046A-1 TRANSISTOR ARRAY ULN-2046A-1 TRANSISTOR ARRAY T T Y P E ULN-2046A-1 general-purpose transistor

Contextual Info: Composite Transistors XP03389 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR2211 (UN2211) + UNR2118 (UN2118) 0.9±0.1

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 04 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X

Contextual Info: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR1213 (UN1213) + UNR1114 (UN1114) 0.9±0.1

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

transistor 3055

Abstract: 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055 Q62702-U58
Contextual Info: IMPIM-Transistor fü r leistungsstarke IMF-Endstufen 2 IM 3055 2 N 3 0 5 5 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 D IN 41 8 72 T O - 3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

sc6211

Abstract: PBSS4520X PBSS5520X transistor ic equivalent book
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X

PBSS4540X

Abstract: PBSS5540X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jan 15 2004 Nov 04 NXP Semiconductors Product data sheet 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X

PBSS4520X

Abstract: PBSS5520X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X

Contextual Info: Composite Transistors UP04311 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead 5˚ • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating

9V-12V DC INPUT

Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
Contextual Info: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data