TRANSISTOR 4103 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SC4266

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BF422

Abstract: BF423
Contextual Info: PNP SILICON TRANSISTOR TO-92 BF423 is PNP silicon plgnar epitaxial transistor designed for high voltage video amplifiers in colour television receivers including grid driver and in driv e r stages ot high voltage line deflection circuits. It is complementary

zener DIODE C25

Abstract: motorola 4102
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su lated G ate B ipolar Transistor N-Channei Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching

Contextual Info: M BF397 PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage Total Power Dissipation

BF397

Contextual Info: BF397 SSî! WíSs. PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage

Contextual Info: • r . BF423 % ~ i :h ï : - ‘. l'\ PNP SILICON TRANSISTOR TO-92 BF423 is PNP silicon plgnar epitaxial transistor designed for high voltage video amplifiers in colour television receivers including grid driver and in driv e r stages ot high voltage line deflection circuits.

3094 transistor

Abstract: BF422 BF423 OQJ300
Contextual Info: BF422 NPN SILICON M 1C R D PLANAR HIGH EPITAXIAL VOLTAGE TRANSISTOR El— ECTRCDINIICIIS MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION ; The BF422 is a NPN silicon planar epitaxial transistor. It features high voltage and is intended for high voltage class A output stage of audio frequency

ME0412

Abstract: ME0411 ME4102 ME0413 ME4101 transistor 4103 ME4103
Contextual Info: ME 4101 ' ME 4102 • ME 4103 SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES MECHANICAL OUTLINE APPLICATIONS TO-92F • High G ain h frg . 1 0 0 - 6 0 0 @ lm A • Low Noise Pre-am plifier

h1208

Abstract: equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
Contextual Info: File No. 679 RF Pow er T ra n s is to rs Solid State o 8*0" 41038 750-mW, 1.68-GHz Oscillator Transistor Features: • Emitter-ballasting resistors ■ 750-rnW oscillator power at 1.68 GHz 20 V ■ Collector connected to case ■ For coaxial, stripline, and

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: National S e mi c o n d u c t o r ~ May 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

IRFF9130

Contextual Info: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

16N40E

Abstract: high power pulse generator with mosfet mosfet 16n 15
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate

BUZ21

Contextual Info: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics

chip die npn transistor

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

of ic UM 66

Abstract: AT-41400 AT-41400-GP4 NF50 S21E chip die npn transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.