TRANSISTOR 3H Search Results

2SK1378

Abstract: 400V INDUSTRIAL voltage regulator Field Effect Transistor Silicon N Channel MOS 400V voltage regulator
Contextual Info: FIELD EFFECT TRANSISTOR 2SK1378 SILICON N CHANNEL MOS TYPE ar-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEEO, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Q.3HAÏ. <3.6>0.2 FEATURES: . High Breakdown Voltage : V(BR)DSS=400V

MOTOROLA DATE CODE transistor

Abstract: MSC2295–BT1
Contextual Info: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s

pa 2030a

Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
Contextual Info: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)

2SJ438

Contextual Info: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS (.2 ± 0 .2 2.710.2

Contextual Info: TO SHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: Provisional Data Sheet No. PD-9.1312 International !Rectifier [TOR IRHF9230 HEXFET TRANSISTOR -200 Volt, 0.8Û , RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technol­ ogy HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

Contextual Info: T O SH IB A RN4906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 . 1± 0.1 1.25 ± 0 . 1. • Including Two Devices in US6 (Ultra Super Mini Type with 6

2SK643

Contextual Info: 2SK643 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low D r a i n - S o u r c e ON R e sistance : R D S ( 0 N ) = 0-6£î(Typ.)

ULN2003 ac

Abstract: ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration
Contextual Info: MARCH 1982 ANALO G DIVISION ULN2001/03/04 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEMATICS PIN CONFIGURATION These high-voltage, h ig h -cu rre n t D arling ­ ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

Contextual Info: MTD2006F • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f# ! ( y ’ - i •? P X ^ - y T ’lEKSifcrO

DALE NTHS-1206N02

Abstract: LTC1730 LTC1730-4 LTC1730EGN-4 LTC173ECGN-4 C1730
Contextual Info: LTC1730-4/LTC1730-4.2 Lithium-Ion Battery Pulse Charger with Overcurrent Protection U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1730 is a complete pulse charger for 1-cell lithium-ion batteries. When charging a depleted cell, the

AN2378

Abstract: POWERSO20 L9935 L9935013TR
Contextual Info: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

CBL-202

Abstract: OMRON Cbl-804 OMRON Cbl-804 pin out CPM1-CIF01 PIN OUT CBL-804 OMRON Cpm2b CQM1H-CIF12 PLC to pc Communication cables pin diagram omron AR2315 CPM2B-32EDT
Contextual Info: Micro Controller Board CPM2B The CPM2B series programmable controllers offer the powerful features and advanced technology of Omron’s brick style micros in a board package. These controllers give you advantages in programming flexibility, reduced development cost and significant space

LED pin configuration

Abstract: NJW4120 NJW4125 NJW4126 NJW4127 SSOP20
Contextual Info: NJW4120 Lithium-ion Battery Charger Controller IC with Timer •GENERAL DESCRIPTION ■PACKAGE OUTLINE NJW4120 is a 1-cell and 2-cell lithium ion battery charge control IC with a built-in AC-DC secondary side control feature. Using a photocoupler to directly feed back optimum charging voltage and

Contextual Info: MIC502 Fan Management IC Advance Information General Description Features The MIC502 is a thermal and fan management 1C which supports the features for NLX/ATX power supplies and other control applications. • • • • • • • • • Fan speed is determined by an external temperature sensor,

2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Contextual Info: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are

Contextual Info: HIP1031 HARRIS S E M I C O N D U C T O R Half Amp High Side Driver with Overload Protection November 1994 Features Description • Over Operating Range: -40°C to +125°C The HIP1031 is a High Side Driver Power Integrated Circuit designed to switch power supply voltage to an output load. It

UGN3075

Abstract: ss41 hall effect sensor US3881 HALL SOT-23 U38 HALL HAL105 HAL115 HAL125 US3881UA marking 866
Contextual Info: 866;4# &026#/RZ#9ROWDJH#+DOO# IIHFW#/DWFK#### HDWXUHV#DQG#%HQHILWV## • ■ ■ ■ ■ Chopper Stabilized Amplifier Stage Optimized for BDC Motor Applications New Miniature Package/Thin, High Reliability Package# Operation Down to 2.2V CMOS for Optimum Stability, Quality and Cost