TRANSISTOR 3H Search Results

2sa1929

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for

BCX71G

Abstract: MMBT5086 FLS SOT 23
Contextual Info: SA MS UN G SEM ICONDUCTOR INC IME D | 7 ^ 4 1 4 5 0007554 2 | PNP EPITAXIAL SILICON TRANSISTOR BCX71G Y-3H- “ GENERAL PURPOSE TRANSISTOR ~ ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Colfecfor-Emitter Voltage Emitter-Base Voltage

t3hs

Abstract: BF970 sot 37
Contextual Info: T-3HS BF970 PHILIPS INTERNATIONAL SbE D 711005b 0042100 731 IPHIN SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended fo r application as self-oscillating mixer stage in u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter

bdl 40

Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
Contextual Info: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor

transistor B 1184

Abstract: MGR638 BFG480W
Contextual Info: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain

Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested

BI 344 TRANSISTOR

Abstract: l43 transistor transistor dk qe 9335 895 DK 53 code transistor
Contextual Info: DISCRETE SEMICONDUCTORS s h eet BFG21W UHF power transistor 1998 Jul 06 Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification UHF power transistor

BC856CW

Abstract: BC856BW
Contextual Info: Product specification Philips Semiconductors BC856W; BC857W; BC858W PNP general purpose transistor PIN CONFIGURATION FEATURES • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. PINNING - SOT323 PIN DESCRIPTION 1 base 2 emitter 3 collector

uln 2800 data

Abstract: BUK566-60H
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

T160R

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

2SD2449

Abstract: 2-21F1A 2SB1594 2sb15
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

PBSS5250T

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES

Contextual Info: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

DARLINGTON 3A 100V npn array

Abstract: mp45
Contextual Info: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 6 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

J493

Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
Contextual Info: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested

2SD2449

Abstract: 2-21F1A 2SB1594 transistor equivalent type
Contextual Info: TO SH IBA 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V q e O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: FZ 600 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces ¡c 1200 V 6 00 A Thermal properties RfhJC DC, pro Baustein / per module RlthCK pro Baustein / per module

Contextual Info: TOSHIBA MP4020 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 Mv • ■ P ■ a ■n i n HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE

BFY90 PHILIPS

Abstract: BFY90
Contextual Info: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

Contextual Info: FS 15 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,167 DC, pro Baustein / per module RthJC 1 DC, pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 15 A

44t transistor

Contextual Info: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 15 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~ *th J C DC, pro Zweig / per arm