TRANSISTOR 3904 Search Results

transistor marking 1y

Abstract: HB573
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

3904 npn

Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Transistor 3904

Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N3904

Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

SMD Transistor 070 R

Abstract: PZT3904 PZT3906 smd 3904 TRANSISTOR
Contextual Info: PZT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3904 3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS PZT3906 APPLICATIONS

3904

Abstract: transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 4 0 V • Collector Dissipation: Pc m ax =625m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

3904

Abstract: KST3903 1A marking FAIRCHILD SOT-23 MARK 30 KST3904 3904 SOT23 MARKING 1Y
Contextual Info: KST3903/3904 KST3903/3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-23 Absolute Maximum Ratings Ta=25°C unless otherwise noted 1. Base 2. Emitter 3. Collector Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage

1N916

Abstract: PZT3904 smd transistor 3t
Contextual Info: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.

3904 npn

Abstract: KST3903 KST3904 FAIRCHILD SOT-23 MARK 1a
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

3904 npn

Abstract: 3904 KST3903 KST3904 KST3904 sot-23 marking code SS SOT23 transistor TRANSISTOR MARKING CODE ss TRANSISTOR 3904 ic 5ma transistor 3904 SOT-23
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -40 -6 -200 350 150 V V V mA mW VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

TRANSISTOR 2N 3904

Abstract: 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1 Characteristic Symbol C ollector-Base Vbltage C ollector-Em itter Voltage

transistor 2222a

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

transistor 2n

Abstract: 3904
Contextual Info: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor

transistor 2N 3904

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most

VPS05604

Contextual Info: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C

3904 NPN

Abstract: KST3904
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C ollecto r-B a se Voltage C o llecto r-E m itte r V oltage Em itter-Base V oltage Symbol Rating VcBO VcEO -6 0 -4 0 -6 -2 0 0

2N3904

Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
Contextual Info: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BT3904

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT3903 me q 7 cib 4],42 GGG7Et.Q t> | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR I SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Coffector-Emitter Voltage Emitter-Base Voltage