TRANSISTOR 38W 16 Search Results

38w smd transistor

Abstract: 38w transistor
Contextual Info: User’s Manual 16 R8C/38W Group, R8C/38X Group, R8C/38Y Group, R8C/38Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

Contextual Info: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression

A 1469 mosfet

Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

transistor 636 mitsubishi

Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1 IDQ10
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

A 1469 mosfet

Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

transistor D 1666

Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

2N7081

Contextual Info: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

80w audio amplifier circuit using stk IC

Abstract: stk 490 310
Contextual Info: Ordering number : EN *5384 _ Thick Film Hybrid 1C _ STK401 -270 AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC

80w hf audio power amplifier

Abstract: MG-200 STK400-200 STK401-270
Contextual Info: Ordering number: EN äs 5384 Thick Film Hybrid 1C STK401-270 No. * 5384 SAÍK.YO i 2ch A F Power Amplifier Split Power Supply 40W + 40W,THD = 0.08% P relim inary O verview Package D im ensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Q output load impedances. It is fully pin

STK400-500

Contextual Info: Ordering number:ENN*5384 Thick Film Hybrid IC STK401-270 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Ω output load impedances. It is fully pin

45W Audio amplifier

Abstract: stk*400-050 STK401-060 100w audio amplifier circuit diagram per channel transistor 38W 100W audio amplifier diagram 4680b
Contextual Info: Ordering number: EN 4680B Thick Film Hybrid IC STK401-060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simply by

transistor 68W

Abstract: LM3886 68w transistor LM3886 circuit diagram LM3886 Overture Audio Power Amplifier Series
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from

68w transistor

Abstract: transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 lm3886 output circuit LM388
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

147J

Abstract: 100OHM RD30HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

stk ic 5.1 channel amplifier

Abstract: stk ic 5.1 circuit diagram 12 v 100w power amp diagram stk 80w audio amplifier circuit using stk IC stk audio amplifier circuit diagram STK 5-channel amp ic audio amplifier stk 070 circuit with PCB all stk ic diagram STK series stk 090
Contextual Info: Ordering number : EN4339A Thick Film Hybrid IC STK400-040 AF Power Amplifier Split Power Supply (25 W + 25 W + 25 W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be

stk ic 5.1 channel amplifier

Abstract: stk ic 5.1 circuit diagram all stk ic diagram stk audio amplifier circuit diagram all amplifier stk 12 v 100w power amp diagram stk stk 090 STK 5-channel amp ic 120w stk STK 5 channel amp
Contextual Info: Ordering number : EN4339A Thick Film Hybrid IC STK400-040 AF Power Amplifier Split Power Supply (25 W + 25 W + 25 W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

stk ic 5.1 channel amplifier

Abstract: STK 5 channel amp stk ic 5.1 circuit diagram 120w stk stk audio amplifier circuit diagram stk power amplifiers stk audio amplifier STK power amplifier stk power audio ics stk audio sanyo
Contextual Info: |Ordering number : EN4339A Thick Film Hybrid 1C ISAÊÊYOI STK400-040 No. 4339A AF Power Am plifier Split Power Supply (25 W + 25 W + 25 W min, THD = 0.4%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

2A265

Abstract: 2A365 ICE 2A165 ICE 2A265 2a165 2a180 AN-SMPS-ICE2AXXX-1 ICE 2A165 EQUIVALENT f7108 siemens GR 60 rectifier
Contextual Info: Version 1.0 , March 2001 Application Note AN-SMPS-ICE2AXXX-1 CoolSET ICE2AXXX for OFF – Line Switch Mode Power Supply SMPS Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com 3RZHU 0DQDJHPHQW 6XSSO\

AN-SMPS-ICE2AXXX-1

Abstract: 2a165 2A265 f7108 ICE2Axxx 2a180 2A365 ICE 2A265 ICE 2A165 ICE 2A165 EQUIVALENT
Contextual Info: Version 1.1 , August 2001 Application Note AN-SMPS-ICE2Axxx-1 CoolSET ICE2Axxx for OFF – Line Switch Mode Power Supply SMPS Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply