TRANSISTOR 38W 16 Search Results

38w smd transistor

Abstract: 38w transistor
Contextual Info: User’s Manual 16 R8C/38W Group, R8C/38X Group, R8C/38Y Group, R8C/38Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

NTE480

Abstract: transistor 38W
Contextual Info: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.

Contextual Info: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression

A 1469 mosfet

Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

transistor 636 mitsubishi

Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1 IDQ10
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

A 1469 mosfet

Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

transistor D 1666

Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Mitsubishi transistor C 1588

Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

stk404-130s

Abstract: STK404-100S STK404-120S EN7733 12v 100w TRANSISTOR AUDIO AMPLIFIER STK4040 100W sub amplifier STK404-130S equivalent
Contextual Info: Ordering number : EN7733 Thick-Film Hybrid IC STK404-120S One-Channel Class AB Audio Power Amplifier IC 80W Overview The STK404-000S series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have been miniaturized using SANYO’s unique insulated metal substrate

2N7081

Contextual Info: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

80w audio amplifier circuit using stk IC

Abstract: stk 490 310
Contextual Info: Ordering number : EN *5384 _ Thick Film Hybrid 1C _ STK401 -270 AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC

80w hf audio power amplifier

Abstract: MG-200 STK400-200 STK401-270
Contextual Info: Ordering number: EN äs 5384 Thick Film Hybrid 1C STK401-270 No. * 5384 SAÍK.YO i 2ch A F Power Amplifier Split Power Supply 40W + 40W,THD = 0.08% P relim inary O verview Package D im ensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Q output load impedances. It is fully pin

Contextual Info: Ordering number: EN 4680B Thick Film Hybrid IC STK401-060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simply by

STK400-500

Contextual Info: Ordering number:ENN*5384 Thick Film Hybrid IC STK401-270 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Ω output load impedances. It is fully pin

45W Audio amplifier

Abstract: stk*400-050 STK401-060 100w audio amplifier circuit diagram per channel transistor 38W 100W audio amplifier diagram 4680b
Contextual Info: Ordering number: EN 4680B Thick Film Hybrid IC STK401-060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simply by

transistor 68W

Abstract: LM3886 68w transistor LM3886 circuit diagram LM3886 Overture Audio Power Amplifier Series
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3

Contextual Info: Ordering number: EN 4680B Thick Film Hybrid 1C STK401 -060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compati­

MITSUBISHI RF POWER MOS FET

Abstract: 071J
Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

68w transistor

Abstract: transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 lm3886 output circuit LM388
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

STK404-100S

Abstract: STK404-130S 150w audio amplifier circuit diagram class AB STK404-140S 100w audio amplifier circuit diagram per channel stk404-120s stk*404-070 STK404-140 STK404-000S STK404-070S
Contextual Info: Ordering number : EN7733 Thick-Film Hybrid IC STK404-120S One-Channel Class AB Audio Power Amplifier IC 80W Overview The STK404-000S series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have been miniaturized using SANYO’s unique insulated metal substrate

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.