TRANSISTOR 3569 Search Results

transistor 3569

Abstract: 3569 pN3569
Contextual Info: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

Contextual Info: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

a 4x transistor

Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor 3569

Abstract: 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor
Contextual Info: y tte NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN /llC F t O E I _ E C ; - r R GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. O I V I I C

sot-343 as

Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

Motorola

Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

MOTOROLA TRANSISTOR

Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13901PP/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

MOTOROLA TRANSISTOR

Abstract: 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA
Contextual Info: Order this document by MBC13901PP/D Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor The MBC13901 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

BLX67

Abstract: mrtil transistor 3568
Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

sk3552

Abstract: sk3564 SK3568 SK3569 SK3596 SK3590 SK3556 SK3565 SK3567 sk3555
Contextual Info: THOMSON/ H DIS TRI BU TOR SflE D INTEGRATED CIRCUIT PINOUTS TD5tiö73 OOCmflM hS7 TCSK com. SK3550 SK 3564 SK 3569 High-Current 7-NPN Transistor Array Time Delay and Ose. Circuit Quad Volt. Comparator Outline No. IC-017 Outline No. IC-014 Outline No. IC-015

transistor rf m 1104

Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET

ATC 1184

Abstract: A113 MRFG35005MT1 tc 106-10
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

MRFG35010M

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

CTB128

Abstract: MHW8242A XMD128
Contextual Info: MOTOROLA Order this document by MHW8242A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW8242A Features • • • • Specified for 77– and 128–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

CTB110

Abstract: MHW7292A XMD110 CATV amplifier transistor
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW7292A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7292A Features • • • • Specified for 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology

NI-360HF

Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from

CTB110

Abstract: MHW7272A XMD110 CATV amplifier transistor
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW7272A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7272A Features • • • • Specified for 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology