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    TRANSISTOR 3182 Search Results

    TRANSISTOR 3182 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR 3182 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    tc120600ma300khztc120503eha+11system420d-81739ds21365b-pagein5817 schottky diode symbol1n5817595din5817ma737tc120303ehatc120333ehaequivalent components for transistor 2n2222 PDF

    SS TRANSISTOR

    Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    tc120600ma300khztc120503eha+4tc120303ehad-81739ds21365b-pagess transistor PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346 PDF

    2SA1766

    Contextual Info: Ordering num ber: EN 3182B N0.3182B SA\YO i _ 2 S A 17 6 6 PNP Epitaxial Planar Silicon Transistor High h;pE> Low-Frequency General-Purpose Amp Applications F eatu res . Adoption of FBET, MBIT processes • High DC current gain hpE “ 500 to 1200


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    3182b250mm2x2sa1766 PDF

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


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    pn100pn100ammbt100mmbt100a+16pn200pn200ammbt200mmbt200afpn330fpn330apnp 3-224npn transistor pn100a2n3906 darlington transistor2n3904 transistor pnppnp 2n3904transistor 31822n3906 npn transistorpnp switching transistor 2n3906transistor 338tn6715a PDF

    MCP73861

    Abstract: MCP73862 MCP7386X MO-220
    Contextual Info: MCP73861/2 Advanced Single or Dual Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers - Integrated Pass Transistor - Integrated Current Sense - Reverse-Blocking Protection


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    mcp73861/2mcp73861mcp73862d-85737+4nl-5152ds21893a-pagemcp7386xmo-220 PDF

    2SA1424

    Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and


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    ne327ne88900ne88912ne88933+4ne88935ne889is12i2sa1424 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 P lastic Medium Power Silicon NPN Transistor Ulotorola Prtfmrtd Otvtet . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS


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    bd438bd442bd437bd441 PDF

    2sA1766

    Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
    Contextual Info: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.


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    enn3182b2sa176625maxitr04526+5itr04527itr04528itr04529itr04530marking al PDF

    Transistor B C 458

    Abstract: c458 2sa1766
    Contextual Info: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity


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    3182b250mm22sa17661200mo/6279mo+2transistor b c 458c458 PDF

    MCP604 pt100 amplifier

    Abstract: pt100 sensor interface WITH ADC "Current to Voltage Converter" pt100 adc microchip mcp602 pt100 jim Williams MCP602 adjustable CMOS Buffer Amplifier amplifier application circuit amplifiers made in korea
    Contextual Info: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


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    an682ds00682c-pagemcp604 pt100 amplifierpt100 sensor interface with adc+8current to voltage converterpt100 adc microchipmcp602 pt100jim williamsmcp602adjustable cmos buffer amplifieramplifier application circuitamplifiers made in korea PDF

    2sA1766

    Abstract: 31821 MARKING AL
    Contextual Info: Ordering number:EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High DC current gain hFE=500 to 1200 . · Large current capacity.


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    en3182b2sa176631821marking al PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    MCP604 pt100 amplifier

    Abstract: jim Williams AN-699
    Contextual Info: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


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    an682mcp604 pt100 amplifierjim williamsan-699 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643 PDF

    2SA1766

    Abstract: ITR04527 marking al
    Contextual Info: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .


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    2sa1766en3182citr04527marking al PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp PDF

    2SC3544

    Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206
    Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry


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    ne9442sc35442sc 792lt 8232+1ct 101 k 104 b 1206 PDF

    20W power transistor

    Contextual Info: TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES: . Low Collector Saturation Voltage : VcE(sat)— l-OV(Typ.) (IC=-3A, IB=-0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


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    2sb9062sd122168max-50ma+120w power transistor PDF

    Contextual Info: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


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    100mv650mafzt749ot-23a+4tc57basedd-81739b73412sdds21437b-page PDF

    ztx458

    Abstract: isoma
    Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX458 ISSUE 2 -M A R C H 1994_ FEATURES * 400 V olt VCE0 * 0.5 A m p continuous current * P.„.= 1 W att E E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    ztx45820mhz-10ma300ns+1isoma PDF

    PNP marking NY sot-223

    Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
    Contextual Info: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


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    100mv650mafzt749ot-23a+13tc57basedd-81739b73412sdds21437b-pagepnp marking ny sot-2232n4403tc55tc57tc572502ecttc573002ecttc573302ectztx7492n4403 diagram PDF

    transistor c 3181

    Abstract: ML SOT23 TRANSISTOR 3182
    Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage


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    650mhz500mhzfmmth10100mhz+4300nstransistor c 3181ml sot23transistor 3182 PDF

    ZTX458

    Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX458 ISSUE 2 – MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    ztx458100ms PDF