TRANSISTOR 2SD261 Search Results

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SD2615

Abstract: 2SB1674
Contextual Info: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.

2SD2618

Abstract: 2SB1676
Contextual Info: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.

2SB1674

Abstract: 2SD2615 transistor 120v
Contextual Info: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.

TO-220FN

Abstract: 2SB1674 2SD2615 2sd26
Contextual Info: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.

2SB1674

Abstract: 2SD2615
Contextual Info: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.

Contextual Info: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector

2SD2614

Abstract: transistor collector diode protection TO-220FN diode zener 40v OA 70 diode 2sd26
Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.

2SB1676

Abstract: 2SD2618 2sd26
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.

2SB1676

Abstract: 2SD2618
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.

2SD2614

Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.

2SD2616

Contextual Info: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage

2SB1672

Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

2SB1674

Abstract: 2SD2615 transistor 120v
Contextual Info: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ

2SB1672

Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at Ic / 2) Excellent DC current gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

LT 672

Abstract: 2SB1672 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

2SB1672

Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

2SB1676

Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector

2SB1672

Abstract: 2SD2611
Contextual Info: 2SB1672 Transistors Power Transistor −80V, −7A 2SB1672 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C).

2SB1674

Abstract: 2SD2615
Contextual Info: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.

2SB1672

Abstract: S-100-12 2SD2611
Contextual Info: 2SB1672 Transistors Power Transistor -80V, -7A 2SB1672 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. Versât) = -0.3V at le / Ib =-4A / -0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25°C). 4) Wide SOA (safe operating area).

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,