TRANSISTOR 2369A Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

KTN2369

Abstract: KTN2369A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. • KTN2369/2369A Electrically Similar to 2N2369/2369A.

J 2N2369

Abstract: KTN2369 KTN2369A
Contextual Info: SEMICONDUCTOR KTN2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES B C A ・High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, IC=10mA). ・Excellent Switching Characteristics. N ・KTN2369/2369A Electrically Similar to 2N2369/2369A.

2369A

Abstract: transistor 2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 jUA to 100 m A.

2044b

Abstract: 2045B
Contextual Info: ^O rd ering number : EN 2 3 6 9 A 2SD1817 No.2369A NPN Epitaxial Planar Silicon Transistor SA W O Driver Applications Applications . Motor drivers, hammer drivers, relay drivers Features . High DC current gain . Small and slim package permitting the 2SDl8l7-applied sets to be made more

2369A

Abstract: 2n2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED S ATU R ATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 ,uA to 100 mA.

KTN2369AU

Abstract: KTN2369U
Contextual Info: KEC KOflEA ELECTRONICS CO.LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369U/AU EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCe=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.

KTN2369A

Abstract: J 2N2369 KTN2369 2369A
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.

KTN2369AU

Abstract: KTN2369U KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

TR 2N 2369A

Abstract: 2369A
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N NT2369A The N T2369A is designed for general purpose amplifier and PACKAGE D IM EN SIO N S high speed switching applications. in m illim e te rs inches FEA TU R ES • High Frequency Current Gain.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

PN2369A

Contextual Info: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

BEL100N

Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

TRANSISTOR TO-106

Abstract: transistor 2222a to-92 Transistors 2N 2N 2905a pnp transistor
Contextual Info: 33E D METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • 53fl33=ï4 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO Volts Device min VCBO VEBO Volts Volts min min hFE at bias IC VCE ICM PTA PTC mA Volts mA mW W A<A max max 1.2 0.010 min/max max max ICBO VCE sat

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT