TRANSISTOR 228 T3 Search Results

K 3115

Abstract: RF tuner 900MHz samsung IMTIA 400M KSC2759 k 4145 transistor npn 200w k 4145
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2759 mE | ?*ibq;me OOOt'iSb S | NPN EPITAXIAL SILICON TRANSISTOR T-31-15 MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 30 14 3 50 150 150 -5 5 - 1 5 0 V Symbol CoBector-Base Voltage

KSD5005

Abstract: KSD5006 L-500 NPN Triple Diffused Planar Silicon Transistor samsung tv FC4A
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D I 7^4145 0a07bS0 fl KSD5005 T-33 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Colleotor-Emltter Voltage Emitter-Base Voltage'

Philips KS 40 Temperature Control

Abstract: BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH
Contextual Info: PowerMOS transistor N AMER PH IL IP S / D I SC RE T E BUZ80 GbE D m bfaSB'm 0014S4E . 7 • T-2Î-W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK444-400B

Contextual Info: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in

transistor abe 438

Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91
Contextual Info: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium

Contextual Info: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fiEb 00442^0 ÜSS « P H I N Philips Components Data sheet status Product specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK453-50B

Abstract: 1B05 BUK453-50A 1B-05 T0220AB D0504 buk453 bfa53
Contextual Info: N AUER P H I L I P S / D I S C R E T E 25E D • bbSBTBl 0020445 b PowerMOS transistor BUK453-50A BUK453-50B T-3^-}| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor 13007

Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

AT-01610

Abstract: avantek AVANTEK transistor AT016
Contextual Info: AVANTEK Q INC 5DE a v a n tek D • 1141%h QOGbMSG □ AT-01610 Up to 4 GHz General Purpose* Silicon Bipolar Transistor * Avantek 100 mil Package Features • 22.0 dBm typical Pi ¿b at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • High Galn-Bandwldth Product: 7.0 GHz typical fr

Transistor B C 458

Contextual Info: MO T OR OL A SC XSTRS/R F 15E D j b3fc,7SSM GüaS2flS 1 | T - 3 3 - 0 7 MOTOROLA T-33-17 S E M IC O N D U C T O R TECHNICAL DATA NPN M JD340 H ig h V o l t a g e P o w e r T r a n s is t o r s PNP M JD350 D P A K For Surface M o u n t A pp licatio n s Designed fo r line operated audio ou tput am plifier, switchm ode power supply

234 optocoupler

Abstract: SOT230
Contextual Info: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and

te 2443 MOTOROLA transistor

Abstract: 2443 MOTOROLA transistor 2N5344 transistor te 2443 EISA sc 107 transistor 80373 K/te 2443 MOTOROLA transistor
Contextual Info: TTü T O K O L A XL 6367254 iX^IK^/K ’TE r> MOTOROLA SÇ_ X S T R S / R F bdb i’eii 4 uuaudr’u □ 96 D 80370 . D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE POWER PNP SILICON TRANSISTOR 1 AMPERE . . . designed for high-voltage switching and amplifier applications.

2N5430 MOTOROLA

Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
Contextual Info: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —

AVANTEK transistor

Abstract: lm 3907 Avantek UA-152
Contextual Info: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique

TRANSISTOR SE 135

Contextual Info: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr

transistor 3904

Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Contextual Info: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.

PHILIPS MOSFET MARKING

Abstract: BF998R UBB087
Contextual Info: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

TEA2117

Contextual Info: S G S - T H O M S O N TEA2117 Hi ¥^ s Rf©S HORIZONTALAND VERTICAL DEFLECTION MONITOR • DIRECT FRAME YOKE DRIVE ± 1.5A DRIV­ ING CURRENT ■ LINE DARLINGTON DRIVING CAPABILITY ■ BUILT-IN FRAME SEPARATOR WITHOUT EXTERNAL COMPONENTS ■ INTEGRATED FLYBACK GENERATOR

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

ESM2030DF

Abstract: ESM2030DV BYT11 S125 ESM2 T100C SGS
Contextual Info: 3QE D m 7 cJ5ciS37 QQ3G42b 4 SGS-THOMSON HLKgTMKS ESM2030DF ESM2030DV S G s-thomson 1 *3 3 -3 5 NPN DARLINGTON POWER MODULE l • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE

NHE313

Abstract: nicera
Contextual Info: ＩＩｎｎＳ Ｓｂｂ TTyyppee H Haalll EElleem meenntt MODEL ＮＨＥ３１３ Features ◆ Absolute Maximum Ratings ◆ This is a high sensitivity type of Nicera Hall element using evaporated InSb Symbol Limit Unit film. Max. Input Current Item Icmax