TRANSISTOR 2227 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

SC 2272

Abstract: transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764
Contextual Info: MOTORCLA SC XSTRS/R F 1EE D | b3t,72SH Gafl72S3 T | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT4772 The RF Line N P N Silicon High Frequency Transistor 2 Iß = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

TRANSISTOR 2226

Abstract: 2226 transistor UNR2227
Contextual Info: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2

2226 transistor

Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227
Contextual Info: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2)   6.8 kΩ

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

RN1221

Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors

RN1227

Abstract: RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN2221
Contextual Info: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = 800mA)

RN1221

Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221 1227 rm-1225
Contextual Info: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = 800mA)

RN1221

Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors

Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The Digital Signal Processor DSP is fabricated using high-density Complementary Metal Oxide Semiconductor (CMOS) with Transistor-TransistorLogic (TTL) compatible inputs and outputs. This section covers the maximum ratings, thermal characteristics, and electrical characteristics of the DSP96002.

RN2227

Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors

RN1221

Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221
Contextual Info: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)

RN1222

Abstract: 1227
Contextual Info: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA)

800ma

Abstract: RN2221 RN2222
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors

RN1224

Contextual Info: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

Helipot

Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir