TRANSISTOR 2030 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR RT1N430C TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING M itsubishi RT1N430C is a one chip transistor w ith built-in bias resistor, unibmm PNP type is RT1P430C.

MP-25

Abstract: NP80N04CHE NP80N04DHE NP80N04EHE
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.

utc 2030

Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

UTC MMBTA56

Abstract: utc 2030 MMBTA56L-AE3-R MMBTA55 MMBTA56 090 B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBTA56L-AE3-R

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES  3 * Collector-Emitter Voltage: VCEO= -80V * Collector Dissipation: PD=350mW 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Ordering Number Note:  MMBTA56G-AE3-R

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES

marking mitsubishi

Abstract: oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1948 FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1948 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unit mm designed with high voltage, high hFe and high fr.

2sc4624

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W

transistor k 4212 fet

Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
Contextual Info: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips

transistor eb 2030

Abstract: transistor 2030 2SC5209 oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

2SA904A

Abstract: 2SA904 cl 100 hie hre hfe
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

Contextual Info: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are

transistor eb 2030

Abstract: 2SA1285 Tone Control amp OC120
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1285, 2SA1285A FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SA1285, 2SA1285A is a silicon PN P epitaxial type transistor. ¿5 .1 M A X Designed with high voltage, high hFE, high fr, small Cob and excellent hFE

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,