TRANSISTOR 20 DB Search Results

MAM287

Abstract: BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Nov 25 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BCP68

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X

S45 marking

Abstract: PBSS5320X SC6210 PBSS4320X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X

S44 MARKING

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X

PBSS4520X

Abstract: PBSS5520X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X

PBSS4320X

Abstract: PBSS5320X sc6210
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X

microwave amplifier 2.4 ghz 10 watts

Abstract: transistor 24 GHz
Contextual Info: 2324-20 20 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier

BLS6G3135-20

Contextual Info: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

10 watt power transistor

Contextual Info: 1720 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

BLS6G3135-20

Contextual Info: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 01 — 7 March 2007 Objective data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

1920A20

Contextual Info: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

transistor c 3206

Abstract: transistor j7
Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

transistor yb

Abstract: M220S transistor t 04 27
Contextual Info: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

T4 0450

Abstract: transistor j8
Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

2SC5787

Abstract: 2SC5787-T3 CRE 6203
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

2SC5787

Abstract: transistor 4580 2SC5787-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

2SC5786

Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

pb4350

Abstract: pbss4350z PBSS5350Z pb435
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES

PB4350

Abstract: PBSS5350Z PBSS4350Z
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES