TRANSISTOR 1X Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5343

Contextual Info: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. 2.9±0.2 GENERAL PURPOSE TRANSISTOR

2N5332

Contextual Info: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

2sa1576

Abstract: 2SA20
Contextual Info: 2SC2412K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: Package:SOT-23 1 Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS.

Contextual Info: MMBT5401LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -150V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

MMBT6520LT1

Contextual Info: MMBT6520LT1 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vce= -350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol ating Unit Collector-Base Voltage Vcbo -350 V Collector-Emitter Voltage

MMBT4403LT

Contextual Info: MMBT4403LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Tamb=25℃

Contextual Info: MMBT4401LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
Contextual Info: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

transistor 25

Abstract: transistor mmbt5551lt1
Contextual Info: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

MMBT2222ALT1 1P

Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
Contextual Info: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25 * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Collector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350

DSP56300

Abstract: DSP56303 G38-87 AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or

marking JB SCHOTTKY BARRIER DIODE

Contextual Info: Ordering number: EN 3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge, facilitating high-density mounting.

tlp731

Abstract: E67349 TLP732 VDE0884 ula 1u
Contextual Info: TOSHIBA TLP731JLP732 TOSHIBA PHOTOCOUPLER OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY GaAs IRED & PHOTO-TRANSISTOR TLP731, TLP732 The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

sb30-03p

Abstract: C51ST
Contextual Info: Ordering num ber: E N 5028 No.5028 SA% YOi // _ FX401 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatures • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK 32032
Contextual Info: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

MMBT3904LT1

Abstract: MMBT3906LT1
Contextual Info: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. Complementary Pair with MMBT3906LT1.

2N5551S

Abstract: MMBT5551LT1
Contextual Info: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: TO SHIBA 2SD2271 TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR MOTOR DRIVE APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 • • High DC Current Gain : hjrj; = 500 (Min.) (V q e = 2V, Iq = 5A)

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages