MMBT4403LT Search Results

MMBT4403LT1

Contextual Info: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

MMBT4403LT1

Contextual Info: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max

Contextual Info: RECTRON SEMICONDUCTOR MMBT4403LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

sot 23 marking code 2t

Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

MMBT4403LT1

Contextual Info: MOTOROLA Order this document by MMBT4403LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4403LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40

MMBT4401LT1

Abstract: MMBT4403LT1
Contextual Info: MMBT4403LT1 PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage

TO-236

Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3
Contextual Info: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

Contextual Info: : S v m Se m i : SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT4403LT1 TRANSISTOR PNP FEATURES Power dissipation PCM : 0.3 W (Tainb=25 °C) Collector current Icm : -0.6 A Collector base voltage V (br)cbo :“ 40 V Operating and storage junction temperature range

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

MMBT44Q3LT1

Abstract: SOA SOT23
Contextual Info: SOT-23 FlastifrgncapsuJate Transistors MMBT4403LT1 TR A N SISTO R . P h i 1 M A llJ B E S P o w e r L tls s n p a h iin Pcm 0.3 W iTamb-25i' > C o lle c to r c u rfe r't Ijv . -D .b A C ollector base voltage ViRRicnn:-40 V O p e ra tin g a n d s to ra g e |unctlon l i i i r i p e r a l u r o ran ge

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage

MBT4403

Contextual Info: WILLAS FM120-M+ MMBT4403LT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch PNPprocess Silicon

2T203

Abstract: MMBT4403LT1
Contextual Info: M C C SOT-23 Plastic-Encapsulate Transistors MMBT4403LT1 TRANSISTOR PNP 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES Pc m : 0.3 W (Tam b=251C ) Collector current ICM: -0.6 A C o llecto r-base vo ltag e V{gr)cbo :-40V Operating and storage junction temperature range

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3G
Contextual Info: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

MMBT4403LT1

Contextual Info: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max Unit

MMBT4401LT1

Abstract: MMBT4403LT1
Contextual Info: MMBT4403LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : -0.6 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

MMBT4403LT1

Abstract: sot 23 marking code 2t MMBT4403LT1G MMBT4403LT3
Contextual Info: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

sot-23 Marking 2T E

Abstract: MMBT4403LT1 2t sot MARKING 2T SOT23 TRANSISTOR
Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4403LT1 1. BASE TRANSISTOR（PNP ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W （Tamb=25℃） Collector current ICM : -0.6

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

1N916

Abstract: MMBT4401LT1 MMBT4403LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MMBT4403LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage