TRANSISTOR 1GM Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm marking

Contextual Info: MMBTA06 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case

Contextual Info: MMBTA06Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 • As complementary type, the PNP tranistor MMBTA56Q is recommended.

1gm transistor

Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Contextual Info: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is

SOT-23

Contextual Info: Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 List List. 1 Package outline. 2

2sc2053

Abstract: 2Sc2053 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

1GM sot-23 transistor

Abstract: UCT 122
Contextual Info: MMBTA06 Small Signal Transistors NPN uct New Features d o r P • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case

1GM sot-23 transistor

Abstract: marking code 1GM sot23-6 marking code 601
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.-H .118 (3.0) .016 (0.4) Top View ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1GM sot-23 transistor

Abstract: 1gm transistor 1GM sot-23 MMBTA06 MMBTA56 MPSA06
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the PNP transistor MMBTA56 is recommended. .056 (1.43) .052 (1.33) 1 ♦ This transistor is also available in the TO-92 case with

1GM sot-23 transistor

Abstract: 1gm transistor transistor 1gm
Contextual Info: MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features — Epitaxial planar die construction. — Complementary PNP type available MMBTA55/MMBTA56 . — Also available in lead free version. Applications — Ideal for medium power amplification and switching

MMBTA06

Contextual Info: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A

Marking 1GM

Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR

Contextual Info: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

1GM sot-23

Abstract: MMBTA06 1GM sot-23 transistor
Contextual Info: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5

bfr106

Abstract: BCW66 marking code FA sot23 12652
Contextual Info: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFT91

Abstract: BFR92p application note marking GFs BCW66 BFR92P E 94733
Contextual Info: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 2 3 from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

marking p1S

Abstract: BCR108W BFR92W BFT92W
Contextual Info: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Complementary type: BFT92W PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

1GM sot-23 transistor

Contextual Info: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage