TRANSISTOR 1616 AC Search Results

KSB1116

Abstract: TRANSISTOR 1616 ac
Contextual Info: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116

TRANSISTOR 1616

Contextual Info: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER

Contextual Info: ykiyjxivki 19-1225; Rev 2 ; 1/98 High-Voltage, Low-Power Linear Regulators for Notebook Computers The MAX1615/MAX1616 are m icropower, SOT23-5 lin­ ear regulators that supply always-on, keep-alive power to CMOS RAM and m icrocontrollers ^Cs in systems with high-voltage batteries. Key features include w ide

YAGEO RC0603JR-070RL

Abstract: Venkel CR0603 10W 100K preset vertical RC0603FR-07100KL C0603C0G500-220JNE smd 0201 Keystone 5000 red 5mm LED with holder smd L21 L21 SMD
Contextual Info: Application Note 1616 Author: Paul Orfanu ISL8036CRSHEVAL1Z Current Sharing 6A Low Quiescent Current High Efficiency Synchronous Buck Regulator Description Quick Setup Guide The ISL8036CRSHEVAL1Z kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from

transistor BC 458

Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

Contextual Info: Section 16. Electrical Specifications 16.1 16 Absolute M axim um Ratings Table 16-1 lists the absolute maximum ratings. Table 16-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0.3 to +7.0 V Programming voltage V pp -0.3 to +13.5

transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
Contextual Info: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

D 1413 transistor

Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Contextual Info: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

MC88110

Abstract: BR3021 motorola bipolar transistor data manual Semiconductor Master Cross Reference Guide SBC68K motorola 6800 assembly language guide DL411 motorola 6800 programming guide MICROPROCESSOR 68000 reference manual 68000 programmers reference manual
Contextual Info: Product Literature and Technical Training In Brief . . . With the pace of new semiconductor product introductions, the task of providing an effective and up–to–date perspective of available components is beyond the means of any single document. Hence, a

DTC114E

Contextual Info: DTC114E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC114EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW.

Contextual Info: DTC143E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 4.7kW 4.7kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC143EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 4.7kW.

Contextual Info: DTC114T series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 10kW Base Collector Base Emitter Emitter DTC114TEB (SC-89) DTC114TM (SC-105AA) EMT3 UMT3F Collector

DTC143ZUB

Abstract: DTC143Z rohm dtc143z
Contextual Info: DTC143Z series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 4.7kW 47kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC143ZM (SC-105AA) EMT3 DTC143ZEB (SC-89) UMT3F lFeatures OUT

DTA114E

Abstract: SC-85 DTA114EUB DTA114E SERIES
Contextual Info: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features

CM500S

Abstract: CXD1268M ICX085AL
Contextual Info: ICX085AL Diagonal 11mm Type 2/3 Progressive Scan CCD Image Sensor with Square Pixel for B/W Cameras For the availability of this product, please contact the sales office. Description The ICX085AL is a diagonal 11mm (Type 2/3) interline CCD solid-state image sensor with a square

CXD1268M

Abstract: sony Lens 3M-Pixel 2SK523 CM500S ICX085AL
Contextual Info: ICX085AL Diagonal 11mm Type 2/3 Progressive Scan CCD Image Sensor with Square Pixel for B/W Cameras Description The ICX085AL is a diagonal 11mm (Type 2/3) interline CCD solid-state image sensor with a square pixel array. Progressive scan allows all pixels

Contextual Info: DTA043X series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 4.7kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ

Contextual Info: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT−223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base

Contextual Info: 7" ^ 3 7 - / ¿ r 2SC » • 023SbGS 00047^4 1 « S I E G PNP Silicon Planar Transistors BSV 15 BSV16 BSV 17 - SIEMENS AKTIENGESELLSCHAF BSV 15, BSV 16 and BSV 17 are epitaxial PNP silicon planar transistors in TO 39 case {5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are

DTD713Z

Contextual Info: DTB713Z series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 1.0kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB713ZM (SC-105AA) lFeatures DTB713ZE SOT-416 (SC-75A) lInner circuit

Contextual Info: DTB543Z series PNP -500mA -12V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -12V -500mA 4.7kW 47kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB543ZM (SC-105AA) lFeatures DTB543ZE SOT-416 (SC-75A) lInner circuit

Contextual Info: DTB743X series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB743XM (SC-105AA) lFeatures DTB743XE SOT-416 (SC-75A) lInner circuit

DIODE marking CJSS

Abstract: marking j5a 2SJ204 2SK1582 T200 T400
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOS FET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device