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MMBT1616A
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Galaxy Semi-Conductor Holdings
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NPN Silicon Epitaxial Planar Transistor |
Original |
PDF
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204.38KB |
4 |
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MMBT1616A
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Unisonic Technologies
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NPN EPITAXIAL SILICON TRANSISTOR |
Original |
PDF
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58.23KB |
4 |
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MMBT1616A-G-TP
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Micro Commercial
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Interface |
Original |
PDF
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465.21KB |
4 |
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MMBT1616A-L-TP
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Micro Commercial
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Interface |
Original |
PDF
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465.21KB |
4 |
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MMBT1616A-X-AE3-R
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Unisonic Technologies
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NPN EPITAXIAL SILICON TRANSISTOR |
Original |
PDF
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58.23KB |
4 |
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MMBT1616A-Y-TP
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Micro Commercial
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Interface |
Original |
PDF
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465.21KB |
4 |
MMBT1616A(RANGE:135-270)
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JCET Group
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MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. |
Original |
PDF
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MMBT1616A(RANGE:200-400)
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JCET Group
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MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. |
Original |
PDF
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