TRANSISTOR 152 M Search Results

Contextual Info: MHW9182B Rev. 2, 3/2003 Freescale Semiconductor Technical Data Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

Contextual Info: Document Number: MHW9182CN Rev. 4, 10/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

Contextual Info: N AUER PHILIPS/DISCRETE b'lE T> bb 5 3 c 31 □□27543 152 I IAPX BC369 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 envelope, intended for low-voltage, high-current LF applications. BC368/BC369 is the matched complementary pair suitable for class-B output stages up to 3 W.

Contextual Info: Freescale Semiconductor Technical Data MHW9182B Rev. 2, 3/2003 CATV Amplifier Module Features • Specified for 110− and 152−Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

transistor 152 M

Abstract: ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507
Contextual Info: BSC D • 0235bG 5 0 Q 0 4 D 2 el 3 W Ê S IE 6 ’ / T ^ ? - / / PNP Germanium Transistors - S IE M E N S — A K T I E N 6 E S E L L S C H A F - A— 1 - 2 for AF, driver and output stages of medium performance

LOGIC 4583

Abstract: FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4583 Group REJ03B0009-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupt . 7 sources

AT-42085

Abstract: at-42085g S21E at42085g
Contextual Info: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many

Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz • Low N oise Figure: 2.OdBTypicalNF0at 2.0 GHz

Contextual Info: rm 1 LETT l/im HEW PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical Pi dBat 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G] ^ at 2.0 GHz • Low Noise Figure:

Contextual Info: AVANTE K I NC 20E d avantek m im n b b ooob454 a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor A vantek 70 m il Package Features • 22.0 dB m typ ical P i dB at 2.0 G Hz • 10.5 dB typ ical G i dB at 2.0 G Hz • High G ain-B and w idth Product: 7.0 G H z typical fr

circuit diagram board

Abstract: 55-QP
Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

Avantek UA-152

Contextual Info: îm n tt 2QE D AVANTEK INC AVANTEK OGObMTS G AT-42085 Up td 6 GHz Medium Power Silicon Bipolar Transistor 'T - S l- Z l Features • • • • • Avantek 85 Plastic Package .020 .51 High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression: .

06309

Abstract: B12V114
Contextual Info: BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 25mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz

AT41500

Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

AT41586-TR1

Abstract: uj3a
Contextual Info: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount

a1746

Abstract: LD 25 VW BUK795-60A
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711ÜSHti □ O l44753 7R2 ■ P H I N Philips Components Data sheet status Preliminary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.

ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic B12V105 transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
Contextual Info: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar

0985

Abstract: ma 1050
Contextual Info: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

Contextual Info: MOTOROLA Order this document by MHW9182B/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW9182B CATV Amplifier Module Features • • • • • Specified for 110– and 152–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

Contextual Info: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching