TRANSISTOR 152 M Search Results

Contextual Info: MHW9182B Rev. 2, 3/2003 Freescale Semiconductor Technical Data Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

Contextual Info: Document Number: MHW9182CN Rev. 4, 10/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

Contextual Info: N AUER PHILIPS/DISCRETE b'lE T> bb 5 3 c 31 □□27543 152 I IAPX BC369 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 envelope, intended for low-voltage, high-current LF applications. BC368/BC369 is the matched complementary pair suitable for class-B output stages up to 3 W.

Contextual Info: Ordering number : EN4653 No.4653 ¡I F C 152 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications F eatu res • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: Freescale Semiconductor Technical Data MHW9182B Rev. 2, 3/2003 CATV Amplifier Module Features • Specified for 110− and 152−Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

transistor 152 M

Abstract: ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507
Contextual Info: BSC D • 0235bG 5 0 Q 0 4 D 2 el 3 W Ê S IE 6 ’ / T ^ ? - / / PNP Germanium Transistors - S IE M E N S — A K T I E N 6 E S E L L S C H A F - A— 1 - 2 for AF, driver and output stages of medium performance

LOGIC 4583

Abstract: FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4583 Group REJ03B0009-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupt . 7 sources

AT-42085

Abstract: AT42085 P 55 NFO S21E Agilent IC
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz

AT-42085

Abstract: at-42085g S21E at42085g
Contextual Info: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many

Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz • Low N oise Figure: 2.OdBTypicalNF0at 2.0 GHz

Contextual Info: rm 1 LETT l/im HEW PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical Pi dBat 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G] ^ at 2.0 GHz • Low Noise Figure:

Contextual Info: AVANTE K I NC 20E d avantek m im n b b ooob454 a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor A vantek 70 m il Package Features • 22.0 dB m typ ical P i dB at 2.0 G Hz • 10.5 dB typ ical G i dB at 2.0 G Hz • High G ain-B and w idth Product: 7.0 G H z typical fr

circuit diagram board

Abstract: 55-QP
Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

06309

Abstract: B12V114
Contextual Info: BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 25mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz

CTB110

Abstract: CTB152 MHW9182B XMD110 XMD152
Contextual Info: MOTOROLA Order this document by MHW9182B/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW9182B CATV Amplifier Module Features • • • • • Specified for 110– and 152–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature

chip die npn transistor

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

AT41500

Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

AT41586-TR1

Abstract: uj3a
Contextual Info: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount

62 01071

Abstract: 3019 Transistor BRF510 c 3198 transistor ic 7413 datasheet TRANSISTOR 4841 IC 4027 transistor 1047 03-198 Bipolarics* BRF510
Contextual Info: BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF510is a high performance silicon bipolar

a1746

Abstract: LD 25 VW BUK795-60A
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711ÜSHti □ O l44753 7R2 ■ P H I N Philips Components Data sheet status Preliminary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Contextual Info: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C

Contextual Info: That mLHM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar TVansistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic B12V105 transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
Contextual Info: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar