TRANSISTOR 152 M Search Results

LOGIC 4583

Abstract: FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4583 Group REJ03B0009-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupt . 7 sources

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz • Low N oise Figure: 2.OdBTypicalNF0at 2.0 GHz

circuit diagram board

Abstract: 55-QP
Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

Contextual Info: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

AT41586

Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

2222A

Abstract: AT-38086 AT-38086-BLK AT-38086-TR1
Contextual Info: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout

WT160-P162

Abstract: SICK IR Sensor
Contextual Info: W T 160 W T 160 -P /N 172 -P /N 112 -P /N 152 ~ 11 n = n T~ - i- cK 1 m - i- ^4 -it, CO 1 f W T 160 -P /N 470 -P /N 410 -P /N 450 Scanning Range 50 m m 80 m m 300 m m Features: • 3 different optics 23— ► t W T 160 -P / N 182 -P / N 122 -P / N 162 n — fT

Contextual Info: Freescale Semiconductor Technical Data MHW9242A Rev. 2, 10/2002 CATV Amplifier Module Features • Specified for 77−, 110−, 128− and 152−Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature

Contextual Info: Freescale Semiconductor Technical Data Replaced by MHW9182CN. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHW9182C CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - and 152 - Channel Loading

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

Contextual Info: m 2N3740 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS 4.0 lc VcEO -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C

Contextual Info: TOSHIBA 2SK2844 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2844 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. APPLICATIONS 4V Gate Drive

20 watts transistor s-band

Abstract: j948
Contextual Info: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

Contextual Info: MHm Power Transistor Arrays Five 12 pin, Four 10 pin and three 8 pin TO-220 power transistors are packed in a single package. Suitable for motor drive and printer dot drive. PSIP8Pin Part No. VcEO V Equivalent circuits Ä3AA11 ! © î 1 ^ T ^ -h î 1

2SB700

Abstract: 2SD717 2SB695 2SB697 2SB699 2SB702/A 2SB688 2SB691 2SB696 2SB706
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

BUK436-60A

Abstract: 134 T31 100-P BUK436-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Ordering number:EN4653 FC152 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

transistor 152 M

Contextual Info: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages

Contextual Info: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

tfk 914

Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n