TRANSISTOR 11N60S5 Search Results
TRANSISTOR 11N60S5 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR 11N60S5 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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11N60S5 equivalent
Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
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SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 | |
TRANSISTOR SMD MARKING CODE 7A
Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
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SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 | |
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Contextual Info: SPW11N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: |
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SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 | |
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Contextual Info: SIEMENS SPW11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation: |
OCR Scan |
SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239 | |
11N60
Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
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SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 11N60 11N60S5 Q67040-S4239 11n6 marking code 68W 70 | |
11N60S5
Abstract: SPB11N60S5 SPP11N60S5
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SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 SPB11N60S5 | |
11N60S5
Abstract: SPI11N60S5
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SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5 | |
SPW11N60S5
Abstract: 06161L 11N60S5 equivalent 11N60S5
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SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5 | |
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Contextual Info: SPW11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID |
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 | |
11N60S5
Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
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SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 | |
11n60s
Abstract: 11n60 SMD CASE footprint
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SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint | |
11N60S5
Abstract: SPP11N60S5 SPB11N60S5
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SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 Q67040-S4198 11N60S5 SPB11N60S5 | |
siemens 350 98
Abstract: 11N60S5 SPW11N60S5
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SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 siemens 350 98 11N60S5 | |
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Contextual Info: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
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SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5 | |
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TRANSISTOR SMD MARKING CODE 7A
Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
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SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5 | |
11N60S5
Abstract: SPW11N60S5
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 | |
AR1010Contextual Info: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances |
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010 | |
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Contextual Info: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
Original |
SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 | |
11N60S5 equivalent
Abstract: 11N60S5 SPW11N60S5
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SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 equivalent 11N60S5 SPW11N60S5 | |
11N60S5
Abstract: SPW11N60S5 20TP
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 20TP | |
11N60S5
Abstract: SPW11N60S5
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SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 | |
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Contextual Info: SPW11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
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SPW11N60S5 PG-TO247 SPW11N60S5 Q67040-S4239 11N60S5 | |
11N60S5
Abstract: SPI11N60S5 SPP11N60S5
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SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 SPI11N60S5 SPP11N60S5 | |
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Contextual Info: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances |
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SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 | |