TRANSISTOR 1102 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

J2735

Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
Contextual Info: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W

Contextual Info: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W

transistor K 1096

Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized

Contextual Info: Philips Semiconductors Objective specification PowerMQS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

transistor rf cm 1104

Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
Contextual Info: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION PHX2N40E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL field-effect power transistor in a full pack, plastic envelope featuring high

Contextual Info: P * FORWARD INTERNATIONAL ELECTRONICS LTD. BC857S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR •Complement to DC847S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: BC108 SEMICONDUCTOR FORWARD INTERNATIONAL BLECIRONKS LTD. NPN EPITAXIAL SILICON TRANSISTOR ~~ TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Bnitter-Base Voltage

Contextual Info: BC107 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a t TanJj=25°C C haracteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage

marking B3A sot23-5

Contextual Info: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

TM1102

Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
Contextual Info: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time

Contextual Info: tgr P BC846S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L m TECHNICAL DATA NPN EPITAXIAL SEICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Co llll lenient to BC856S ABSOLUTE MAXIMUM RATINGS at I an*=25°C Symbol Rating Characteristic Collector-Base Voltage

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

transistor rf cm 1104

Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Contextual Info: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: P e BC857 SEMICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a tT a iriM !5°C Symbol Rating Characteristic Unit Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: p BC846 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C C haracteristic Symbol R ating Vcbo 80 Collector-Base Voltage Unit V Collector-Emitter Voltage

j597

Abstract: TRANSISTOR j589
Contextual Info: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 2 — 28 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

K1150PG

Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Contextual Info: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%

j353 transistor

Abstract: BLF7G20LS-250P transistor j353 800B JESD625-A RF35
Contextual Info: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance

1241 transistor

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 1 — 18 July 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

JESD625-A

Abstract: BLS7G2729L-350P radar IF UNIT
Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.