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    TRANSISTOR 02N60S5 Search Results

    TRANSISTOR 02N60S5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
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    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
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    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
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    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
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    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR 02N60S5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    02N60S5

    Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
    Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5 PDF

    Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2 PDF

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original
    SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 PDF

    02N60S5

    Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original
    SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 PDF

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 GPS05560
    Contextual Info: SPN02N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original
    SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 GPS05560 PDF

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Contextual Info: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5 PDF

    02N60S5

    Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
    Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original
    SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 PDF

    02N60S5

    Abstract: 02N60 SPD02N60S5 SPU02N60S5
    Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5 PDF

    02N6

    Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 PDF

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Contextual Info: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5 PDF

    SPB02N60S5

    Abstract: SPP02N60S5 02N60 02N60S5 02n60s
    Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 SPP02N60S5 SPB02N60S5 02N60 02N60S5 02n60s PDF

    02N6

    Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623
    Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 PDF

    SPB02N60S5

    Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
    Contextual Info: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 P-TO263-3-2 02N60S5 Q67040-S4181 SPB02N60S5 02N60S5 siemens 230 98 O PDF

    SPB02N60S5

    Abstract: SPP02N60S5
    Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO263-3-2


    Original
    SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5 PDF

    SPN02N60S5

    Contextual Info: SPN02N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 3 Ω 0.4


    Original
    SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 PDF

    02n60s5

    Abstract: SPN02N60S5 VPS05163 02N6
    Contextual Info: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original
    SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6 PDF

    Contextual Info: SPN02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


    Original
    SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 PDF

    SPN02N60S5

    Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original
    SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 PDF

    SPB02N60S5

    Contextual Info: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    SPB02N60S5 PG-TO263 SPB02N60S5 Q67040-S4212 02N60S5 PDF

    SPP02N60S5

    Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    SPP02N60S5 P-TO220-3-1 PG-TO220-3-1 SPP02N60S5 PG-TO220-3-1 Q67040-S4181 02N60S5 PDF

    SPP02N60S5

    Abstract: 02N60S5
    Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1


    Original
    SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02N60S5 PDF

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 02N60
    Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original
    SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60 PDF

    Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1


    Original
    SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 PDF

    02N60

    Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163
    Contextual Info: SPN02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original
    SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 02N60 02N60S5 GPS05560 VPS05163 PDF