TRANSISTOR 02N60S5 Search Results
TRANSISTOR 02N60S5 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR 02N60S5 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
02N60S5
Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
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OCR Scan |
SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5 | |
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Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity |
OCR Scan |
SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2 | |
SPP02N60S5
Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
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Original |
SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 | |
02N60S5
Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
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SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 | |
SPN02N60S5
Abstract: 02N60S5 VPS05163 GPS05560
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SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 GPS05560 | |
02N60S5
Abstract: SPB02N60S5 SPP02N60S5
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Original |
SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5 | |
02N60S5
Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
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Original |
SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 | |
02N60S5
Abstract: 02N60 SPD02N60S5 SPU02N60S5
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Original |
SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5 | |
02N6
Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
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Original |
SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 | |
02N60S5
Abstract: SPB02N60S5 SPP02N60S5
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Original |
SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5 | |
SPB02N60S5
Abstract: SPP02N60S5 02N60 02N60S5 02n60s
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Original |
SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 SPP02N60S5 SPB02N60S5 02N60 02N60S5 02n60s | |
02N6
Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623
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Original |
SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 | |
SPB02N60S5
Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
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SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 P-TO263-3-2 02N60S5 Q67040-S4181 SPB02N60S5 02N60S5 siemens 230 98 O | |
SPB02N60S5
Abstract: SPP02N60S5
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Original |
SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5 | |
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SPN02N60S5Contextual Info: SPN02N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 3 Ω 0.4 |
Original |
SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 | |
02n60s5
Abstract: SPN02N60S5 VPS05163 02N6
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Original |
SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6 | |
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Contextual Info: SPN02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors |
Original |
SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 | |
SPN02N60S5Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance |
Original |
SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 | |
SPB02N60S5Contextual Info: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
Original |
SPB02N60S5 PG-TO263 SPB02N60S5 Q67040-S4212 02N60S5 | |
SPP02N60S5Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances |
Original |
SPP02N60S5 P-TO220-3-1 PG-TO220-3-1 SPP02N60S5 PG-TO220-3-1 Q67040-S4181 02N60S5 | |
SPP02N60S5
Abstract: 02N60S5
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Original |
SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02N60S5 | |
SPN02N60S5
Abstract: 02N60S5 VPS05163 02N60
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Original |
SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60 | |
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Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 |
Original |
SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 | |
02N60
Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163
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Original |
SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 02N60 02N60S5 GPS05560 VPS05163 | |