TRAM Search Results

PC 845 MOTHERBOARD CIRCUIT diagram

Abstract: PC 845 MOTHERBOARD VOLTAGE diagram inmos transputer T425 imsc004 ttm22 inmos transputer T225 PC 845 MOTHERBOARD CIRCUIT diagram PC KT805 IMSB426 inmos transputer reference manual
Contextual Info: TRANSPUTER TRAM SOLUTIONS Transtech Parallel Systems designs and manufactures embedded multi-processing products for OEM, end-user and scientific research applications. Transtech produces signal processing and computing systems based on SGSThomson transputers, PowerPC processors, Analog

operational transconductance amplifier

Abstract: 4242 DM 13700 88ti NJM137000 M3D1 DMP16 NJM13600D SSOP16
Contextual Info: NJM13600/13700 DUAL OPERATIONAL TRAMSCORDOCTUCE AM PLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION The N J M 13600/13700 consist o f two current controlled transcon­ d u ctan ce a m p lifie rs e ach with d iffe re n tia l in p u ts and a push pull output. The two am plifiers share com m on supplies but otherwise oper­

X157

Contextual Info: S E M IC O N D U C T O R 74LVX157 Low Voltage Quad 2-Input M ultiplexer General Description Features The LVX157 is a high-speed quad 2-input m ultiplexer. Four bits ot data tram tw o sources can be selected using the co m ­ mon S elect and Enable inputs. T h e to u r outputs present the

TRAM1812

Abstract: GSM Intercom From circuit B10T 10nK 63 TRAM4015 TRAM1008 TRAM0603 TRAM0805 TRAM132
Contextual Info: TOKEN TRAM Air Core Coils Spring Inductors SMD Air Core Coils Flat Top Spring Inductors SMD Air Core Coils - TRAM Series Token offers The Smallest Air Coil Inductors for Only 1.8 x 2.0 x 2.0 mm (TRAM) Preview The latest range of air core surface mount coils from Token is fully compliant with RoHS legislation and

AOI222

Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

1230122-QAR01

Abstract: SD-0150000005 0150902-20RG0 1230121-QAR01 hypertac connector insertion tools daniels ft8 0200422-20RN1 hd HYPERTRONICS
Contextual Info: HyperMod NG Series Rectangular Connector Monobloc Insulator HyperMod rectangular connector range is completed with a new generation of monobloc insulator connectors - the HyperMod NG Series. This connector is ideal for high speed trains, intercity trains, trams and locomotives and

ITT 2222 A

Abstract: MIL-J-5624 031-3118-003 itt 2222 ITT 435-1 QQ-A-591 030-3198-003 MS3165-8 CCHP-8-6 030-3196-015
Contextual Info: MIL-C-5015 Rear Release Connectors Standard Circular High Environmental Connectors - These connectors are available for many applications, from commercial/industrial and mass tramsportation systems to the most stringent high reliability military and space requirements.

Contextual Info: Applications of our Power Semiconductor AC/DC Drive Technology Traction Vehicles • C urrent C onverter • El. Locom otives • Frequency C onverter • Trams, U n d e rg ro u n d • D C-Drives ■ Industry-Train • Softstarters ■ D C -C ontroller for

inmos T414

Abstract: IMS T414 T414 inmos transputer T425 IMSB401 T800 transputer inmos transputer IMSB008 T800 IMST414
Contextual Info: Chapter 17 149 IMS B401 TRAM 32-bit transputer 32 Kbytes Size 1 □ m os Engineering Data Reset Analyse-NotError ^ o /j- IMS T800 LinkO -«- h * or Linkl - - H , IMS T425 32 Kbytes SRAM Link2 Link3. Terminated links FEATURES GENERAL DESCRIPTION

IMSB417

Abstract: T800 inmos static ram
Contextual Info: Chapter 23 189 IMS B417 TRAM 32-bit transputer 4 Mbytes Size 4 m os Engineering Data Reset Analyse NotError Terminated links Subsystem. PAL FEATURES IMS T800 25 MHz Transputer 64 Kbytes of zero wait-state SRAM 4 Mbytes of single wait-state DRAM Subsystem controller circuitry

B407 diode

Abstract: T222-20 T222 transputer IMSF00 t222 tl7705
Contextual Info: Chapter 32 265 IMS B421 IEEE 488 GPIB Size 4 TRAM Œrûrnos’ Reset Analyse NotError — < '] — Engineering Data 48K SRAM 8K EEROM configuration switches t t t 1 GPIB interface controller FEATURES IMS 1222 transputer 48 Kbytes of tw o-cycle RAM Full electrical com pliance with IEEE-488

B408

Abstract: B408 diode INMOS T800
Contextual Info: Chapter 26 209 IMS B408 Frame store TRAM Size 8 mos Engineering Data FEATURES GENERAL DESCRIPTION • The IMS B408 implements the drawing and image storage parts of a medium to high perform­ ance graphics system. It incorporates a powerful 32-bit microprocessor with on-chip FPU, 1 Mbyte

F001B

Contextual Info: Chapter 83 IMS F001B GPIB libraries mos Product Information A software support package for the IMS B421 GPIB TRAM KEY FEATURES • Interfaces transputer networks to GPIB instrumenation

inmos transputer link adapter

Abstract: IMSB014 VME card cage
Contextual Info: Chapter 39 329 IMS B014 VMEbus slave card mos Engineering Data FEATURES GENERAL DESCRIPTION • The IMS BOM module motherboard is compat­ ible with VMEbus Specification Rev. C.1. It is a standard depth 160mm , double height (6U) card, containing 8 TRAM slots with associated

4304

Abstract: zocalos
Contextual Info: Tarjeta experimental RE440-LF - epóxido FR4 1,50 mm, por dos lados 35 µm CU pth - estañado en caliente (HAL-leadfree) - nodos de soldadura Ø 1,40 mm - 4304 agujeros Ø 0,80 mm - trama de agujeros desplazados 2,54 x 2,54 mm, gracias a ello duplicación de

RE527-HP

Contextual Info: Tarjeta experimental RE527-HP - papel endurecido con resina fenolada FR2 1,50 mm, por una lado 35 µm CU - protección orgánica de la superficie OSP - impresión de posición por el lado de los componentes - 38 conductores impresos con 57 agujeros - trama de agujeros 2,54 x 2,54 mm

conector D-sub 9

Abstract: DIN 41652 D-Sub 9 d sub 15 d-sub 50 paras RE224-LF
Contextual Info: Tarjeta experimental para conector D-Sub DIN 41652 RE224-LF - epóxido FR4 1,50 mm, por un lado 35 µm de Cu - estañado en caliente HAL-leadfree - conector D-Sub DIN 41652 - 2 x 9 polos y 2 x 15 polos - 48 x 35 nodos de soldadura Ø 2,10 mm - trama de agujeros 2,54 x 2,54 mm

Contextual Info: Tarjeta experimental RE317-LF - epóxido FR4 1,5 mm, por un lado 35 µm CU - estañado en caliente HAL-leadfree - 37 x 55 nodos de soldadura Ø 2,0 mm - trama de agujeros 2,54 x 2,54 mm - diámetro de los agujeros 1,0 mm - conector enchufable 32 polos DIN 41612 trama 5,08 mm modelo D

RE435-LF

Contextual Info: Tarjeta experimental SMD RE435-LF - epóxido FR4 0,70 mm, por dos lados 35 µm CU pth - quimica de SN - campo tramado de agujeros SMD 1,27 x 1,27 mm (1/40") - 39 x 59 nodos de soldadura 1,0 mm² - diámetro de los agujeros 0,35 mm - adecuada para todos los respectivos componentes SMD

CONECTOR

Abstract: RE523-LF
Contextual Info: Tarjeta experimental RE523-LF - epóxido FR4 1,5 mm, por un lado 35 µm CU - estañado en caliente HAL-leadfree - 37 vías conductoras con 57 agujeros - trama de agujeros 2,54 x 2,54 mm - diámetro de los agujeros 1,0 mm - conector directo de 37 polos trama 2,54 mm

B452

Abstract: ST20450 IMS processor
Contextual Info: IMS B452  4MByte SIZE 2 TRAM ENGINEERING DATA Reset Analyse NotError Link0 4MBytes DRAM ST20450 Link1 Link2 Link3 Terminated links Subsystem PAL FEATURES • 40MHz ST20450 Transputer • 4 Mbyte of zero wait-state DRAM 100ns memory cycle time • Size 2 TRAM

Contextual Info: Tarjeta experimental RE510-S3 - CEM3 1,5 mm, por un lado 35 µm CU - HAL-leadfree - 38 vías conductoras con 226 agujeros - Trama de agujeros 2,54 x 2,54 mm - Diámetro de los agujeros 1,0 mm - Tamaño 100 x 580 mm

EIA-343

Abstract: G300B B-419 g300 video b419
Contextual Info: Chapter 30 243 I M S B 4 1 9 Integrated graphics TRAM Size 6 OinimOS' Engineering Data FEATURES GENERAL DESCRIPTION • The IMS B419 incorporates the IMS G300B Co­ lour Video Controller CVC with the IMS T800 32 bit Floating Point Transputer to form a high per­

MH1099

Abstract: MH1242 PO11V5 4138G
Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)