PARAS Search Results

laser DFB 1550nm 10mW

Abstract: VCSEL array, 850nm TOSA pcb 850nm VCSEL application laser DFB 1550nm 10mW single 1550nm laser diode for 10Gbps 1550nm optical detector 10Gbps LC TOSA wiggle LC-TOSA SFP 10gbps
Contextual Info: DATA SHEET 1/2/4/8 GBPS 850NM VCSEL LC TOSA PACKAGES HFE7192-XXX FEATURES: LC TOSA HFE7192-x6x includes flex circuit LC TOSA HFE7192-x8x leaded package High performance VCSEL Low electrical parasitic TO package The HFE7192-xxx uses a high-performance Vertical Cavity Surface Emitting

Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o ) r

Contextual Info: Very Wideband ADCH-80+ ADCH-80 RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 800 ohm typ.

PNP Monolithic Transistor Pair

Contextual Info: LS3550C MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS3550C is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

ZO 109

Abstract: zo 109 MA
Contextual Info: Very Wideband ADCH-80A+ ADCH-80A RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA CASE STYLE: CD542 PRICE: $2.75 ea. QTY. 10-49 • low parasitic capacitance 0.1 pf typ.

Contextual Info: Very Wideband ADCH-80A+ ADCH-80A RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 800 ohm typ.

Contextual Info: LS131 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems replaces discontinued Intersil IT131 The LS131 is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

LS122

Abstract: dual NPN Transistor
Contextual Info: LS122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The LS122 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

IT122

Contextual Info: IT122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The IT122 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: LS3250A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250A is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications.

Contextual Info: LS120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The LS120 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: LS310 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS310 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

MPC8300

Abstract: MPC8001-MPC8100 MPC8000 mpc8001
Contextual Info: MPC8001-MPC8100 PASSIVE DEVICES – MMSM Capacitors ® TM RoHS COMPLAINT KEY FEATURES DESCRIPTION • Low parasitics LP = 0.02nH Typical CP = 0.04pF Typical • Surface Mount design  Broadband Performance through X-Band  Available on Tape & Reel or on

2N5911

Contextual Info: 2N5911 SERIES N-Channel JFET Pairs C T S ificon ix incorporated The 2N5911 Series are JFET matched pairs mounted in a single TO-78 package. Ttiis two-chip design reduces parasitic performance at high-frequency while ensuring extremely tight matching. The 2N5911 features high

10 GHz gunn diode

Abstract: millimeter gunn diode
Contextual Info: AFC378 G aAs FLIP CHIP S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz typ. . Low capacitance : CT0 = 0.032 pF Extremely rugged. Passivated planar construction. High reproducibility of parasitics. A P PL IC A TI O N S

Contextual Info: NCBD1 DIE N-Channel JFET Pair CT*S ilico n ix JL w The NCBD1 Die is a matched pair of JFETs. This two-chip design reduces parasitic performance at high frequency while ensuring extremely tight matching. The die features high breakdown voltage V(br gss typically

314 optocoupler

Abstract: tk75002 CHARACTERISTICS DIODE tl431 tl431 CONSTANT CURRENT 6 pin pulse transformer Pulse Amplitude Modulator Opt pam circuit phase shifter transformer Tl431 as optocoupler driver
Contextual Info: TK75002 Power Conversion ICs ERROR SIGNAL ISOLATOR FEATURES APPLICATIONS • Eliminates Opto-Coupler from Feedback Loop ■ Power Supplies with Primary-Side Controller ■ Replaces TL431 and Eliminates Parasitic Zero ■ Low Isolation-Barrier Capacitance Equipment

Contextual Info: mÊÈKSr Thin Film Chip Resistor Networks RN 1632 Series 1.0 Application These 1206 chip resistor networks are available with either 2 or 3 resistors, and offer better perfor­ mance than SIP networks. The surface mount package allows for less parasitic capacitance/induc­

Contextual Info: Chip Power Splitter PS Series Specification subject to change - Please call factory. 1.0 Description A high frequency component using thin film technology to derive a power splitter. The surface mount package is ideal where low noise and low parasitic capacitance and inductance are required. The “G” Series

Contextual Info: DATA SHEET 10GBPS 850NM VCSEL LC AND SC TOSA PACKAGE HFE6X9X-56X FEATURES: LC TOSA HFE619x-56x SC TOSA HFE639x-56x High performance VCSEL Low electrical parasitic TO package with flexible interface Data rates from DC to 12.5Gbps Differential, Cathode or Anode

Contextual Info: DATA SHEET 10GBPS 850NM VCSEL LC TOSA PACKAGE SFP+ APPLICATIONS HFE6192-X61 FEATURES: HFE6192-261 normal polarity HFE6192-361 inverted polarity High performance VCSEL Low electrical parasitic TO package with flexible interface Data rates from DC to 12.5Gbps

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN + Preamp LC ROSA Package Preliminary HFD3180-108 Key Features: LC ROSA High performance GaAs PIN photodiode with separate transimpedance amplifier Low electrical parasitic TO46 package

diode ct12

Abstract: MA46583 MA46582 ma46580
Contextual Info: Beam Lead Constant Gamma GaAs Tuning Varactors MA46580 thru 589 Series V3.00 Features ● ● ● ● ● ● ● Case Style 992 Gamma of 1.0 and 1.25 Available Constant Gamma for Linear Tuning Strong Beam Construction Low Parasitic Capacitance High Q Close Capacitance Tracking

Schottky diode wafer

Contextual Info: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs