TR MARKING G1 Search Results
TR MARKING G1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| MG80C186-10/BZA |   | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |   | ||
| ICM7555MTV/883 |   | ICM7555MTV/883 - Dual marked (5962-8950303GA) |   | ||
| MQ80C186-10/BYA |   | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |   | ||
| 54121/BCA |   | 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |   | ||
| 54AC20/SDA-R |   | 54AC20/SDA-R - Dual marked (M38510R75003SDA) |   | 
TR MARKING G1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| marking k4
Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 
 | OCR Scan | OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 marking k4 100az FMMT2222A BCW33 | |
| MC10107
Abstract: MC10107FN MC10107L MC10107P ANSI 
 | Original | MC10107 MC10107 MC10107L MC10107P r14525 MC10107/D MC10107FN MC10107L MC10107P ANSI | |
| MC10107
Abstract: MC10107P MC10107FN MC10107L MC10107D 
 | Original | MC10107 MC10107 MC10107L MC10107P r14525 MC10107/D MC10107P MC10107FN MC10107L MC10107D | |
| Contextual Info: SIEMENS BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ V TR tuners Type Marking Ordering Code Pin Configuration Package B B 639C yellow S Q62702-B695 1 =C SOD-323 2 =A Maximum Ratings Symbol Parameter Diode reverse voltage | OCR Scan | Q62702-B695 OD-323 235b05 G1204bb 235b05 01E04b7 | |
| MC10102
Abstract: MC10102P MC10102L MC10102-D equivalent MC10102FN 
 | Original | MC10102 MC10102 MC10102L MC10102P r14525 MC10102/D MC10102P MC10102L MC10102-D equivalent MC10102FN | |
| MC10197
Abstract: MC10197FN MC10197L MC10197P 
 | Original | MC10197 MC10197 MC10197L MC10197P r14525 MC10197/D MC10197FN MC10197L MC10197P | |
| 10197
Abstract: MC10197 MC10197FN MC10197L MC10197P 
 | Original | MC10197 MC10197 MC10197L MC10197P r14525 MC10197/D 10197 MC10197FN MC10197L MC10197P | |
| A1615
Abstract: mc10102l 
 | Original | MC10102 MC10102 MC10102L MC10102P r14525 MC10102/D A1615 mc10102l | |
| MC10103FN
Abstract: MC10103L MC10103 MC10103P 
 | Original | MC10103 MC10103 MC10103L MC10103P r14525 MC10103/D MC10103FN MC10103L MC10103P | |
| MC10103L
Abstract: MC10103 MC10103FN MC10103P 
 | Original | MC10103 MC10103 MC10103L MC10103P r14525 MC10103/D MC10103L MC10103FN MC10103P | |
| MC10102
Abstract: MC10102P MC10102-D equivalent MC10102FN MC10102L mc10102l for application S/BIP/SCB345100/B/1587/MC10102L 
 | Original | MC10102 MC10102 MC10102L MC10102P r14525 MC10102/D MC10102P MC10102-D equivalent MC10102FN MC10102L mc10102l for application S/BIP/SCB345100/B/1587/MC10102L | |
| 4A32A1Contextual Info: MC10197 Hex AND Gate The MC10197 provides a high speed hex AND function with strobe capability. • PD = 200 mW typ/pkg No Load • tpd = 2.8 ns typ (B–Q) • tpd = 3.8 ns typ (A–Q) • tr, tf = 2.5 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS | Original | MC10197 MC10197 MC10197L MC10197P r14525 MC10197/D 4A32A1 | |
| triac ST T4 1060
Abstract: ST T4 1060 ST T4 0560 T4 3570 T4 0560 triac T4 0560 ST T4 0570 ST T4 3570 ST T4 3560 T4 3560 B 
 | Original | O-220AB ISOWATT220AB T405-xxxB T405-xxxB-TR T405-xxxH T405-xxxT T405-xxxW T410-xxxB T410-xxxB-TR T410-xxxH triac ST T4 1060 ST T4 1060 ST T4 0560 T4 3570 T4 0560 triac T4 0560 ST T4 0570 ST T4 3570 ST T4 3560 T4 3560 B | |
| MC10104
Abstract: MC10104L MC10104FN MC10104P 
 | Original | MC10104 MC10104 MC10104L MC10104P r14525 MC10104/D MC10104L MC10104FN MC10104P | |
|  | |||
| MC10104FN
Abstract: MC10104P MC10104 MC10104L 
 | Original | MC10104 MC10104 MC10104L MC10104P r14525 MC10104/D MC10104FN MC10104P MC10104L | |
| T4 1060
Abstract: MC10101P T45 marking MC10101L mc10101 MC10101FN 
 | Original | MC10101 MC10101 MC10101L MC10101P r14525 MC10101/D T4 1060 MC10101P T45 marking MC10101L MC10101FN | |
| MC10106
Abstract: MC10106FN MC10106L MC10106P 
 | Original | MC10106 MC10106 MC10106L MC10106P r14525 MC10106/D MC10106FN MC10106L MC10106P | |
| mc10109
Abstract: MC10109L MC10109FN MC10109P 
 | Original | MC10109 MC10109 MC10109L MC10109P r14525 MC10109/D MC10109L MC10109FN MC10109P | |
| MC10106
Abstract: MC10106FN MC10106L MC10106P 
 | Original | MC10106 MC10106 MC10106L MC10106P r14525 MC10106/D MC10106FN MC10106L MC10106P | |
| MC10105
Abstract: MC10105L MC10105P MC10105FN t4 1080 
 | Original | MC10105 MC10105 MC10105L MC10105P r14525 MC10105/D MC10105L MC10105P MC10105FN t4 1080 | |
| MC10105
Abstract: MC10105L MC10105P MC10105FN 
 | Original | MC10105 MC10105 MC10105L MC10105P r14525 MC10105/D MC10105L MC10105P MC10105FN | |
| mc10109
Abstract: MC10109FN MC10109L MC10109P 
 | Original | MC10109 MC10109 MC10109L MC10109P r14525 MC10109/D MC10109FN MC10109L MC10109P | |
| Contextual Info: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a | Original | TDM4953 TDM4953 | |
| 8205 A mosfet
Abstract: 8205 mosfet 
 | Original | TDM8205 TDM8205 OT23-6L 8205 A mosfet 8205 mosfet | |