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    TR MARKING CODE L5 Search Results

    TR MARKING CODE L5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy

    TR MARKING CODE L5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter


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    v23990-p629-l59-pm200v/40a PDF

    r778

    Abstract: STANAG 3838
    Contextual Info: * * *New Product Release * * * M il-Std-l553/1760/MacAir Products NHI-15182EMT +5V Dual Redundant Extended Memory Enhanced Terminal Bus Controller, Remote Terminal, Bus Monitor, Concurrent RT/Monitor, 64K Words Internal RAM November 1, 1996 The NHI-15182EMT is a low cost complete interface between a dual redundant MIL-Std-1553 bus


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    nhi-15182emtil-std-l553/1760/macairmil-std-1553nhi-1582et+6nhi-15182emtgw/mil-std-883182emt183emtr778stanag 3838 PDF

    Contextual Info: Central BAS56 Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 con­ sists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an


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    bas56ot-143cpd41 PDF

    Contextual Info: TAAA12J3A REV. S ta tu s LOW PROFILE, THREE FLANGE 12VA POWER TRANSFORMER APPROVED TO U L506 AND CSA 0 2 2 .2 NO. 6 6 - 1 9 8 8 AND USES A UL CLASS B 13CTC APPROVED INSULATION SYSTEM v A. REVISION 0 5 / 0 1 / 0 7 YS / ' \ '_ Electrical S p ecifications (@25°C)


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    taaa12j3a13ctc100mq500vdc PDF

    Contextual Info: Series A2000, LP2000 & CB2000 Single Row Terminal Blocks A20510807WR SPECIFICATIONS Rating: A2: 30A, 300V* LP2: 30A, 150V* CB2: 30A, 300V* Center Spacing: 0.375” or 3/8” 9.52mm Wire Range: #12-22 AWG CU Screw Size: #6-32 zinc-plated philslot LP202110


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    a2000lp2000cb2000a20510807wr+4lp202110e62622a38/b38/f38a38/b38 PDF

    SOT143 Marking l51

    Abstract: code l51 L51 transistor marking sot-143 BAS56
    Contextual Info: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an


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    bas56ot-14335unless200ma+6500ma400masot143 marking l51code l51l51 transistormarking sot-143 PDF

    code l51

    Abstract: L51 MARKING BAS56
    Contextual Info: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with


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    bas56ot-143200ma500ma+5400ma100ns13-novembercode l51l51 marking PDF

    SOT143 DUAL DIODE

    Abstract: BAS56
    Contextual Info: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


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    bas56ot-143200ma500ma+3400ma100nssot143 dual diode PDF

    code l51

    Abstract: MARKING CODE R7 DIODE "wl5" WL5 SOT-143 BAS56 L51 MARKING
    Contextual Info: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


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    bas56ot-143200ma500ma+7400ma100nscode l51marking code r7 diodewl5wl5 sot-143l51 marking PDF

    M/MARKING CODE R7 DIODE

    Abstract: BAS56
    Contextual Info: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


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    bas56ot-143200ma500ma+3400ma100nsm/marking code r7 diode PDF

    marking code tr4

    Abstract: NK4 RESISTOR melf blue tr505 tr4 vishay n 332 ab C40101-019
    Contextual Info: A COMPANY OF VISHAY Standard C O M P O N E N T S U.K. METAL FILM NK./TR./FP. Features • low noise • exceptional high frequency characteristics • approved to BS CECC/BT/M O D • proven high reliability • Qualified to CEC C40101-019 Style Style


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    c40101-019marking code tr4nk4 resistormelf blue+3tr505tr4 vishayn 332 ab PDF

    marking code v6 SOT23

    Abstract: ANALOG DEVICES MARKING DATE CODE marking L5 sot363 marking code v6 29 DIODE SOT-363 marking h2 H2 sc-88a ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information
    Contextual Info: MC74VHC1G66 Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog


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    mc74vhc1g66mc74vhc4066marking code v6 sot23analog devices marking date code+6marking l5 sot363marking code v6 29 diodesot-363 marking h2h2 sc-88aanalog devices assembly date codeanalog devices assembly code marking information PDF

    Contextual Info: INDEX All Series Marking Options Single Row Terminal Blocks Marking Options & Accessories Standard Marking Blocks to be marked on both sides require a different code for each side. Example: “L1” on one side of the block requires “L2” on the other side to ensure common terminal marking. Specify by


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    PDF

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    dld601/dmar-2001r14525dld601+10on semiconductor markingfairchild marking codes sot-23w2d sot23diode w2dsot-353 marking l5marking code vk, sot-363va sot-3531c sot353mc74vhc1g135vsop8 package outline PDF

    H2D MARKING CODE

    Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
    Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    mc74hc1g08mc74hc353/sch2d marking code+4marking code v6 diodev = device codeh2d markingdiode marking code v3 PDF

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


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    mc74hc1g14mc74hc353/scdiode marking code v3+6sot 23-5 marking code h5v = device codemarking h5 sot 23-5wafer fab plant codes stfairchild mosxaa64 PDF

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Contextual Info: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    mc74hc1g00mc74hc353/scand8004/d+6v = device codedate code marking toshiba nandpin diode marking code wkmarking sbnh1d markingand8004 PDF

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Contextual Info: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    mc74hc1gu04mc74hc353/sct138a+8u04 fairchildwafer fab plant codes stpin diode marking code wku04 fairchild markingalpha new year date codediode m7 smpmarking code vhcv = device code PDF

    MC74HC

    Abstract: marking t132 marking code V6 diode V = Device Code
    Contextual Info: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    mc74hc1g04mc74hc353/scmarking t132+2marking code v6 diodev = device code PDF

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    mc74hc1g32mc74hc353/scwafer fab plant codes st+8v = device codet138-amarking 563 fairchildalpha new year date codemarking t132marking sbndiode m7 smphep08 PDF

    LD33 VOLTAGE REGULATOR

    Abstract: LD33 regulator LD33 VOLTAGE REGULATOR 3.3v LD33 SOT 223 LD33 LD33 SOT223 Analog Marking Information LD50 VOLTAGE REGULATOR LD33 marking SOT223 marking ld33
    Contextual Info: Packaging for Automatic Handling — Tape & Reel General Description Tape & Reel Surface mount and TO-92 devices are available in tape and reel packaging. Surface mount components are retained in an embossed carrier tape by a cover tape. TO‑92 device leads are secured


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    ansi/eia-481-c-2003ot-23sc-70ot-143+11ot-223ld33 voltage regulatorld33 regulatorld33 voltage regulator 3.3vld33 sot 223ld33ld33 sot223analog marking informationld50 voltage regulatorld33 marking sot223marking ld33 PDF

    CTS 750 series

    Abstract: 3570 1301 051 94v0 1052 schematic amplify CV 203 TMC 3162 3570 1301 PSA 88C Delco Electronics 3570 1301 151 Delco Electronics 185
    Contextual Info: R E S I S T O R P R O D U C T S The CTS Resistor Products Catalog is also on the World Wide Web at www.ctscorp.com. The Web Catalog is updated regularly to provide all customers with the latest information on new products and improvements. You can also contact us at


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    cts 750 series3570 1301 05194v0 1052 schematicamplify cv 203+6tmc 31623570 1301psa 88cdelco electronics3570 1301 151delco electronics 185 PDF

    M39015

    Abstract: JM39015 ATR panel pin RT12C2Y101 RT24C2W501 MARKING CODE T5E RT12C2 marking code TS RT22C2P103 RTR24DW202
    Contextual Info: f i - x f-G ? 1/2” SQUARE / MULTITURN / WIREWOUND SEALED • Listed on the QPL for style RT22 per MIL-R-27208 and RTR22 per High-Rel MIL-R-39015 POURNS Model 3250/RT22/RTR22 Bourns Trimming Potentiometer Electrical C haracteristics Standard Resistance Range


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    mil-r-27208rtr22mil-r-390153250/rt22/rtr22+15rtr24dwrtr24dw103rtr24dx501rtr24dx202rtr24dx502m39015jm39015atr panel pinrt12c2y101rt24c2w501marking code t5ert12c2marking code tsrt22c2p103rtr24dw202 PDF

    BAS56

    Contextual Info: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


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    bas56ot-143150oc200ma+3500ma400ma100ns PDF