AP10N70 Search Results
AP10N70 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP10N70I-A-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 57.86KB | 4 | ||
| AP10N70P | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 188.44KB | 6 | ||
| AP10N70P-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 188.79KB | 6 | ||
| AP10N70P-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.21KB | 4 | ||
| AP10N70R | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.21KB | 4 | ||
| AP10N70R-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 101.52KB | 4 | ||
| AP10N70S | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 171.26KB | 5 | ||
| AP10N70W | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 221.81KB | 5 |
AP10N70 Datasheets Context Search
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/pap10n70265vaco-220+2 | |
AP10N70Contextual Info: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S |
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ap10n70r/p-aap10n70265vaco-220+3 | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70wap10n70265vac100us+1 | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS 650V RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 0.62 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/p-aap10n70265vaco-220+3 | |
10N70PContextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/p-aap10n70265vaco-220+2 | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70wap10n70265vac10n70w | |
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Contextual Info: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal |
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ap10n70s265vacto-263o-263+2 | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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Contextual Info: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G RoHS Compliant & Halogen-Free 650V 0.62 10A S Description |
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ap10n70i-a-hfo-220cfm100us100ms | |
10N70Contextual Info: AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with |
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ap10n70i-ao-220cfm10n70i10n70 | |
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/pap10n70265vaco-220+3 | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/p-aap10n70265vaco-220+3 | |
g10a
Abstract: marking codes transistors SSs
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ap10n70s265vaco-26310n70s+2 | |
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/pap10n70265vaco-220+2 | |
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Contextual Info: Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best |
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ap10n70w-hf-3ap10n7010n70w | |
10N70
Abstract: 68A40
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ap10n70i-ao-220cfm10n70i10n70+1 | |
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Contextual Info: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70S is specially designed as main switching devices for universal |
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ap10n70s265vaco-26310n70s | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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ap10n70r/p-aap10n70265vaco-220+2 | |
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Contextual Info: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement 650V RDS ON 0.62Ω ID G ▼ RoHS Compliant & Halogen-Free |
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ap10n70i-a-hfo-220cfm100us100ms | |